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Variation of P2 series interconnects electrical conductivity in the CIGS solar cells by picosecond laser-induced modification

机译：P2系列的变化通过皮秒激光诱导的修饰互连了CIGS太阳能电池中的电导率

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摘要

Cu-chalcopyrite based solar cells, such as Cu(In,Ga)Se-2 (generally called CIGS) have been established as the most efficient thin-film technology in converting sunlight into electricity. High efficiency, flexibility and small weight make this technology attractive for future developments. Large scale production of these devices requires innovative technological solutions including the laser scribed monolithic interconnects. Laser scribing is needed to maintain module efficiency by dividing large scale device to smaller cells interconnected in series. Serious challenges in laser scribing technology have to be solved, including the laser induced thermal modification of the CIGS absorber layer. CIGS layer is thermally sensitive material, and laser modification can induce local structural changes and phase transitions to the metallic state. That is undesirable for the P3 scribing since superior isolating properties are needed. However, this effect can be used for the P2 process - interconnection of the adjacent cells. In this study, we investigated the picosecond laser modification of the CIGS active layer to form the series interconnect. The P2 laser process was optimized relying on the scribe electrical resistivity measurements with the best value of 3.5 Omega.cm. The EDS analysis revealed the increase of Cu/(Ga + In) ratio in laser treated areas while Raman measurements indicated changes in main CIGS peak and the formation of the Cu-rich CuGaSe2 phase. Therefore, this resulted in a significant electrical conductivity increase in laser-treated areas which is acceptable for the cell serial interconnection. (C) 2016 Elsevier Ltd. All rights reserved.
机译：已经建立了基于铜黄铜矿的太阳能电池，例如Cu（In，Ga）Se-2（通常称为CIGS），是将阳光转化为电能的最有效的薄膜技术。高效率，灵活性和轻巧性使该技术对未来的发展具有吸引力。这些设备的大规模生产需要创新的技术解决方案，包括激光划刻的单片互连。通过将大型设备划分为串联的较小电池，需要激光划刻来保持模块效率。必须解决激光划片技术中的严峻挑战，包括CIGS吸收层的激光诱导热改性。 CIGS层是热敏材料，激光改性会引起局部结构变化和相变至金属态。对于P3划线，这是不希望有的，因为需要出色的隔离性能。但是，此效果可用于P2过程-相邻单元的互连。在这项研究中，我们研究了皮秒激光对CIGS有源层的改性，以形成串联互连。 P2激光工艺是根据划痕电阻率测量值进行了优化的，最佳值为3.5Ω.cm。 EDS分析表明，激光处理区域中的Cu /（Ga + In）比增加，而拉曼测量则表明CIGS主峰发生了变化，并形成了富Cu的CuGaSe2相。因此，这导致在激光处理的区域中电导率显着增加，这对于电池串联互连是可以接受的。 （C）2016 Elsevier Ltd.保留所有权利。

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  • 来源
    《Solar Energy》 |2016年第7期|493-502|共10页
  • 作者

    Gecys P.; Markauskas E.; Zemaitis A.; Raciukaitis G.;

  • 作者单位

    Ctr Phys Sci & Technol, Savanoriu Ave 231, LT-02300 Vilnius, Lithuania;

    Ctr Phys Sci & Technol, Savanoriu Ave 231, LT-02300 Vilnius, Lithuania;

    Ctr Phys Sci & Technol, Savanoriu Ave 231, LT-02300 Vilnius, Lithuania;

    Ctr Phys Sci & Technol, Savanoriu Ave 231, LT-02300 Vilnius, Lithuania;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    CIGS; P2 process; Scribe conductivity; Picosecond laser;

    机译：CIGS;P2工艺;划线电导率;皮秒激光;

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