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首页> 外文期刊>IEEE Journal of Solid-State Circuits >Logic circuits using resonant-tunneling hot-electron transistors (RHETs)
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Logic circuits using resonant-tunneling hot-electron transistors (RHETs)

机译:使用谐振隧道热电子晶体管(RHET)的逻辑电路

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摘要

A full adder and a 1/2 frequency divider using resonant-tunneling hot-electron transistors (RHETs) are proposed. These circuits make the best use of negative differential conductance, a feature of RHETs, and contain much fewer transistors than used in conventional circuits. They were fabricated using self-aligned InGaAs RHETs and WSiN thin film resistors on a single chip. The RHETs have an i-InGaAlAs/i-InGaAs collector barrier that improves the current gain at low collector-based voltages. Circuit operation was confirmed at 77 K with a supply voltage of 3 V.
机译:提出了使用谐振隧道热电子晶体管(RHET)的全加法器和1/2分频器。这些电路充分利用了RHET的特性-负差分电导,并且所包含的晶体管比传统电路少得多。它们是在单个芯片上使用自对准InGaAs RHET和WSiN薄膜电阻器制造的。 RHET具有一个i-InGaAlAs / i-InGaAs集电极势垒,可改善低集电极电压下的电流增益。确认电路工作在77 K且电源电压为3 V的情况下。

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