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首页> 外文期刊>IEEE Journal of Solid-State Circuits >An 8 ns 4 Mb serial access memory
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An 8 ns 4 Mb serial access memory

机译:一个8 ns 4 Mb串行访问存储器

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摘要

A new architecture for serial access memory is described that enables a static random access memory (SRAM) to operate in a serial access mode. The design target is to access all memory address serially from any starting address with an access time of less than 10 ns. This can be done by all initializing procedure and three new circuit techniques. The initializing procedure is introduced to start the serial operation at an arbitrary memory address. Three circuit techniques eliminate extra delay time caused by an internal addressing of column lines, sense amplifiers, word lines, and memory cell blocks. This architecture was successfully implemented in a 4-Mb CMOS SRAM using a 0.6 mu m CMOS process technology. The measured serial access time was 8 ns at a single power supply voltage of 3.3 V.
机译:描述了一种用于串行访问存储器的新体系结构,该体系结构使静态随机访问存储器(SRAM)能够在串行访问模式下运行。设计目标是从任何起始地址开始以小于10 ns的访问时间串行访问所有存储器地址。这可以通过所有初始化过程和三种新的电路技术来完成。引入了初始化过程以在任意存储器地址处开始串行操作。三种电路技术消除了由列线,读出放大器,字线和存储单元模块的内部寻址引起的额外延迟时间。使用0.6μmCMOS工艺技术在4-Mb CMOS SRAM中成功实现了该体系结构。在3.3 V的单电源电压下,测得的串行访问时间为8 ns。

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