A 15-GHz gate array implemented with AlGaAs/GaAs heterojunction bipolar transistors

Wang K.-C.; Asbeck P.M.

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A 15-GHz gate array implemented with AlGaAs/GaAs heterojunction bipolar transistors

机译：用AlGaAs / GaAs异质结双极晶体管实现的15 GHz门阵列

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The authors report on a 500-gate array implemented with AlGaAs/GaAs heterojunction bipolar transistors (HBTs) using an ECL/CML circuit approach. The HBTs have f/sub t/'s and f/sub max/'s above 55 GHz. Frequency dividers personalized on this gate array have shown flip-flop toggle rates up to 15.6 GHz, the highest ever demonstrated with gate arrays. Measurement on delay chains at 2-mA source current showed unloaded gate delay of 26 ps and additional delays of 8 ps/fan-out and 0.12 ps/fF of capacitive load. The gate array has been fabricated successfully in a research laboratory and in a pilot production facility.

机译：作者报告了使用ECL / CML电路方法，用AlGaAs / GaAs异质结双极晶体管（HBT）实现的500门阵列。 HBT具有高于55 GHz的f / sub t /和f / sub max /。在该门阵列上个性化的分频器显示出高达15.6 GHz的触发器触发速率，这是门阵列所展示的最高水平。在2mA电源电流下对延迟链进行的测量显示，空载栅极延迟为26ps，附加延迟为8ps /扇出，电容性负载为0.12ps / fF。门阵列已在研究实验室和中试生产设备中成功制造。

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来源
《IEEE Journal of Solid-State Circuits》 |1991年第11期|P.1669-1672|共4页
作者
Wang K.-C.; Asbeck P.M.;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类一般性问题;基本电子电路;
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专利

1. High speed linear array circuit with AlGaAs/GaAs heterojunction bipolar transistors (HBTs) [J] . Lunardi L.M., Archer V.D. Electronics Letters . 1990,第15期

机译：带有AlGaAs / GaAs异质结双极晶体管（HBT）的高速线性阵列电路
2. Properties of AlGaAs/GaAs heterojunction bipolar transistor with AlGaAs ledge bypass capacitor [J] . T. K. Oh, J. G. Lee, K. H. Yi Solid-State Electronics . 2002,第1期

机译：AlGaAs壁架旁路电容器的AlGaAs / GaAs异质结双极晶体管的性能
3. n-AlGaAs/p-GaAs-GaN HETEROJUNCTION BIPOLAR TRANSISTOR: THE FIRST TRANSISTOR FORMED VIA WAFER FUSION [J] . SARAH ESTRADA, EVELYN HU, UMESH MISHRA International Journal of High Speed Electronics and Systems: Devices, Integrated Circuits and Systems, Optical and Quantum Electronics . 2004,第1期

机译：n-AlGaAs / p-GaAs / n-GaN异质结双极晶体管：通过晶片融合形成的第一晶体管
4. A 15GHz Gate Array Implemented With AlGaAs/GaAs Heterojunction Bipolar Transistors [C] . Keh-Chung Wang, Asbeck, P.M. . 1991

机译：采用AlGaAs / GaAs异质结双极晶体管实现的15GHz门阵列
5. Analysis and modeling of physical mechanisms contributing to the AlGaAs/GaAs heterojunction bipolar transistor reliability. [D] . Sheu, Shyh-Horng. 1997

机译：分析和建模有助于AlGaAs / GaAs异质结双极晶体管可靠性的物理机制。
6. Optimization of GaAs Nanowire Pin Junction Array Solar Cells by Using AlGaAs/GaAs Heterojunctions [O] . Yao Wu, Xin Yan, Wei Wei, 2018

机译：AlGaAs / GaAs异质结优化GaAs纳米线pin结阵列太阳能电池
7. Charge storage in the quasineutral regions of Si homojunction, AlGaAs/GaAs heterojunction, and Si/SiGe heterojunction bipolar transistors [O] . J. J. Liou 1992

机译：Si同质结，AlgaAs / GaAs异质结和Si / SiGe异质结双极晶体管的拟鸣区域
8. AlGaAs/InGaAsN/GaAs PnP double heterojunction bipolar transistor [R] . Chang, P. C. , Baca, A. G. , Li, N. Y. , 2000

机译：alGaas / InGaasN / Gaas pnp双异质结双极晶体管

A 15-GHz gate array implemented with AlGaAs/GaAs heterojunction bipolar transistors

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