An 80-ns 1-Mb flash memory with on-chip erase/erase-verify controller

Seki K.; Kume H.

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An 80-ns 1-Mb flash memory with on-chip erase/erase-verify controller

机译：具有片上擦除/擦除验证控制器的80ns 1Mb闪存

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An internal erase and erase-verify control system has been implemented in an electrically erasable, reprogrammable, 80-ns 1-Mb flash memory, which is suitable for in-system reprogram applications. The memory utilizes a one-transistor type cell with a cell area of 10.4 mu /sup 2/. The die area is 32.3 mm/sup 2/. An erase mode is initiated by a 50-ns pulse. An erase and erase-verify sequence is automatically conducted in a chip without any further external control. The internal status can be checked through a status-polling mode. The 80-ns access time results from advanced sense amplifiers as well as low-resistance polysilicide word lines and scaled periphery transistors. To realize high-sensitivity, high-speed sense circuits, a pMOS transistor (whose gate is connected to its drain) is used as a load transistor.

机译：内部擦除和擦除验证控制系统已在可电擦除，可重新编程的80 ns 1-Mb闪存中实现，适用于系统内重新编程应用。该存储器利用一个单元面积为10.4μs/ sup 2 /的单晶体管型单元。模具面积为32.3mm / sup 2 /。擦除模式由50 ns的脉冲启动。擦除和擦除验证序列在芯片中自动进行，无需任何其他外部控制。可以通过状态轮询模式检查内部状态。 80 ns的访问时间是由先进的读出放大器以及低电阻的多晶硅字线和成比例的外围晶体管引起的。为了实现高灵敏度，高速感测电路，将pMOS晶体管（其栅极连接至其漏极）用作负载晶体管。

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《IEEE Journal of Solid-State Circuits》 |1990年第5期|P.1147-1152|共6页
作者
Seki K.; Kume H.;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类一般性问题;基本电子电路;
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3. A Negative Word-Line Voltage Negatively-Incremental Erase Pulse Scheme with △V_(TH) = 1/6 △ V_(ERASE) for Enterprise Solid-State Drive Application Ferroelectric-NAND Flash Memories [J] . Teruyoshi Hatanaka, Ryoji Yajima, Mitsue Takahashi, Japanese journal of applied physics . 2010,第4issue2期

机译：用于企业固态驱动器铁电与NAND闪存的ΔV_（TH）= 1/6△V_（ERASE）的负字线电压负增量擦除脉冲方案
4. An 80 ns 1 Mb flash memory with on-chip erase/erase-verify controller [C] . Seki, K., Kume, . 1990

机译：具有片上擦除/擦除验证控制器的80 ns 1 Mb闪存
5. Hot-carrier effects in flash erasable programmable read-only memory devices. [D] . San, Kemal Tamer. 1994

机译：闪存可擦可编程只读存储设备中的热载流子效应。
6. Has Erasing Made Things Clearer? Commentary on Schmidt Liefooghe De Houwer (): An Episodic Model of Task Switching Effects: Erasing the Homunculus from Memory [O] . Iring Koch, Aureliu Lavric 2020

机译：有擦除让事情更清楚？ SchmidtLiefooghe＆De Houwer（）的评论：任务切换效果的eocodic模型：从内存中删除homunculus
7. A 1-Mb 2-Tr/b Nonvolatile CAM Based on Flash Memory Technologies [O] . Tohru Miwa, Hachiro Yamada, Yoshinori Hirota, 1996

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8. In the Matter of Certain Flash Memory Controllers, Drivers, Memory Cards, and Media Players and Products Containing Same. Investigation No. 337-TA-619 [R] . 2010

机译：在某些闪存控制器，驱动程序，存储卡和媒体播放器以及包含它们的产品中。调查编号337-Ta-619

An 80-ns 1-Mb flash memory with on-chip erase/erase-verify controller

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