...
首页> 外文期刊>IEEE Journal of Solid-State Circuits >Analysis and reduction of sense-amplifier offset
【24h】

Analysis and reduction of sense-amplifier offset

机译:感测放大器失调的分析和减少

获取原文
获取原文并翻译 | 示例
           

摘要

The offset of sense amplifiers used for dynamic RAMs (DRAMs) at the megabit level is investigated. An analytic expression which permits an easy calculation of the different offset contributions is derived. The influence of the transistor size and the effect of decoupling devices between bit lines and amplifier are discussed. The sensitivity can be improved if a preamplifier is used. Here, a circuit that doubles the sense signals by switching two capacitors between bit line and reference line is presented. The performance of the preamplifier has been verified through its realization on a test chip.
机译:研究了用于兆位级动态RAM(DRAM)的读出放大器的失调。推导了允许容易地计算不同的偏移贡献的解析表达式。讨论了晶体管尺寸的影响以及位线和放大器之间去耦器件的影响。如果使用前置放大器,可以提高灵敏度。在此,提出了一种通过在位线和参考线之间切换两个电容器来使检测信号加倍的电路。前置放大器的性能已通过在测试芯片上的实现得到验证。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号