A 16-GB 640-GB/s HBM2E DRAM With a Data-Bus Window Extension Technique and a Synergetic On-Die ECC Scheme

著录项

• 来源
  《IEEE Journal of Solid-State Circuits》 |2021年第1期|199-211|共13页
• 作者

  Chun Ki Chul; Kim Yong Ki; Ryu Yesin; Park Jaewon; Oh Chi Sung; Byun Young Yong; Kim So Young; Shin Dong Hak; Lee Jun Gyu; Ho Byung-Kyu; Park Min-Sang; Cho Seong-Jin; Woo Seunghan; Moon Byoung Mo; Kil Beomyong; Ahn Sungoh; Lee Jae Hoon; Kim Soo Young; Choi Seouk-Kyu; Jeong Jae-Seung; Ahn Sung-Gi; Kim Jihye; Kong Jun Jin; Sohn Kyomin; Kim Nam Sung; Lee Jung-Bae;

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• 作者单位

  Samsung Elect DRAM Design Team Memory Div Hwaseong 18448 South Korea;

  Samsung Elect DRAM Design Team Memory Div Hwaseong 18448 South Korea;

  Samsung Elect DRAM Design Team Memory Div Hwaseong 18448 South Korea;

  Samsung Elect DRAM Design Team Memory Div Hwaseong 18448 South Korea;

  Samsung Elect DRAM Design Team Memory Div Hwaseong 18448 South Korea;

  Samsung Elect DRAM Design Team Memory Div Hwaseong 18448 South Korea;

  Samsung Elect DRAM Design Team Memory Div Hwaseong 18448 South Korea;

  Samsung Elect DRAM Design Team Memory Div Hwaseong 18448 South Korea;

  Samsung Elect DRAM Design Team Memory Div Hwaseong 18448 South Korea;

  Samsung Elect DRAM Design Team Memory Div Hwaseong 18448 South Korea;

  Samsung Elect DRAM Design Team Memory Div Hwaseong 18448 South Korea;

  Samsung Elect DRAM Design Team Memory Div Hwaseong 18448 South Korea;

  Samsung Elect DRAM Design Team Memory Div Hwaseong 18448 South Korea;

  Samsung Elect DRAM Design Team Memory Div Hwaseong 18448 South Korea;

  Samsung Elect DRAM Design Team Memory Div Hwaseong 18448 South Korea;

  Samsung Elect DRAM Design Team Memory Div Hwaseong 18448 South Korea;

  Samsung Elect DRAM Design Team Memory Div Hwaseong 18448 South Korea;

  Samsung Elect DRAM Design Team Memory Div Hwaseong 18448 South Korea;

  Samsung Elect DRAM Design Team Memory Div Hwaseong 18448 South Korea;

  Samsung Elect DRAM Design Team Memory Div Hwaseong 18448 South Korea;

  Samsung Elect DRAM Design Team Memory Div Hwaseong 18448 South Korea;

  Samsung Elect DRAM Design Team Memory Div Hwaseong 18448 South Korea;

  Samsung Elect DRAM Design Team Memory Div Hwaseong 18448 South Korea;

  Samsung Elect DRAM Design Team Memory Div Hwaseong 18448 South Korea;

  Samsung Elect DRAM Design Team Memory Div Hwaseong 18448 South Korea;

  Samsung Elect DRAM Design Team Memory Div Hwaseong 18448 South Korea;

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• 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  Through-silicon vias; Random access memory; Computer architecture; Microprocessors; Bandwidth; Layout; Built-in self-test; 3-D-stacked memory; built-in self-test (BIST); data bus; high bandwidth memory (HBM); on-die ECC (OD-ECC); power delivery network (PDN); through-silicon via (TSV);

  机译：通过硅通孔;随机存取存储器;计算机架构;微处理器;带宽;布局;内置自检;3-D堆叠内存;内置自检（BIST）;数据总线;高带宽内存（HBM ）;模具ECC（OD-ECC）;电力传递网络（PDN）;通过硅通孔（TSV）;