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首页> 外文期刊>Solid-State Circuits, IEEE Journal of >Ferroelectric (Fe)-NAND Flash Memory With Batch Write Algorithm and Smart Data Store to the Nonvolatile Page Buffer for Data Center Application High-Speed and Highly Reliable Enterprise Solid-State Drives
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Ferroelectric (Fe)-NAND Flash Memory With Batch Write Algorithm and Smart Data Store to the Nonvolatile Page Buffer for Data Center Application High-Speed and Highly Reliable Enterprise Solid-State Drives

机译：具有批量写入算法和智能数据存储到非易失性页面缓冲器的铁电（Fe）-NAND闪存，适用于数据中心应用的高速，高可靠性企业级固态硬盘

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摘要

A ferroelectric (Fe)-nand flash memory with a batch write algorithm and a smart data store to the nonvolatile page buffer is proposed. An enterprise solid-state drive (SSD) for a data center is a future promising market of nand flash memories. The critical problem for such an enterprise SSD is a slow random write. The write unit in a nand flash memory is a page, 4-8 KBytes. Because the minimum write unit of the operating system is a sector, 512 Bytes, a random write to write a smaller data than a page size frequently happens, which creates a garbage. As a garbage accumulates, a garbage collection is performed to increase a workable memory capacity. The garbage collection takes as much as 100 ms, which is 100 times longer than a page program time, 800 $mu$ s, and thus causes a serious performance degradation. In the proposed Fe-nand flash memory, the data fragmentation in a random write is removed by introducing a batch write algorithm where a page buffer in the Fe-nand flash memory temporarily stores a program data. The memory cell program starts after the program data as much as the page size accumulates in page buffers. As the data fragmentation is eliminated, the SSD performance can double. In addition, the nonvolatile page buffer realizes a power-outage-immune highly reliable operation. With a low program/erase voltage of 6 V and a high endurance of 100 million cycles, the proposed Fe-nand flash memory is most suitable for a highly reliable high-speed low-power data-center-application enterprise SSD.
机译：提出了一种具有批量写入算法和智能数据存储到非易失性页面缓冲器的铁电（Fe）-nand闪存。用于数据中心的企业固态驱动器（SSD）是nand闪存的未来有希望的市场。对于这种企业级SSD来说，关键问题是随机写入速度慢。 nand闪存中的写入单元是4-8 KB的页面。因为操作系统的最小写入单位是一个512字节的扇区，所以经常进行随机写入以写入比页面大小小的数据，这会造成垃圾。随着垃圾的累积，执行垃圾收集以增加可用的存储容量。垃圾回收最多需要100毫秒，这比页面编程时间（800 $ mu $ s）长100倍，因此导致严重的性能下降。在提出的Fe-nand闪存中，通过引入批量写入算法来消除随机写入中的数据碎片，其中Fe-nand闪存中的页缓冲器临时存储程序数据。存储单元程序在程序数据与页面缓冲区中累积的页面大小一样多之后开始。由于消除了数据碎片，因此SSD性能可以提高一倍。另外，非易失性页面缓冲器实现了免电源中断的高度可靠的操作。拟议的Fe-nand闪存具有6 V的低编程/擦除电压和1亿次循环的高耐久性，最适合于高度可靠的高速低功耗数据中心应用企业级SSD。

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