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首页> 外文期刊>IEEE Journal of Solid-State Circuits >High-Voltage Analog System for a Mobile NAND Flash
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High-Voltage Analog System for a Mobile NAND Flash

机译：用于移动NAND闪存的高压模拟系统

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High-voltage analog circuits, including a novel high-voltage regulation scheme, are presented with emphasis on low supply voltage, low power consumption, low area overhead, and low noise, which are key design metrics for implementing NAND Flash memory in a mobile handset. Regulated high voltage generation at low supply voltage is achieved with optimized oscillator, high-voltage charge pump, and voltage regulator circuits. We developed a design methodology for a high-voltage charge pump to minimize silicon area, noise, and power consumption of the circuit without degrading the high-voltage output drive capability. Novel circuit techniques are proposed for low supply voltage operation. Both the oscillator and the regulator circuits achieve 1.5 V operation, while the regulator includes a ripple suppression circuit that is simple and robust. Through the paper, theoretical analysis of the proposed circuits is provided along with Spice simulations. A mobile NAND Flash device is realized with an advanced 63 nm technology to verify the operation of the proposed circuits. Extensive measurements show agreement with the results predicted by both analysis and simulation.
机译：提出了包括新颖的高压调节方案在内的高压模拟电路，重点是低电源电压，低功耗，低面积开销和低噪声，这是在手机中实现NAND闪存的关键设计指标。通过优化的振荡器，高压电荷泵和电压调节器电路，可以在低电源电压下调节高电压产生。我们开发了一种用于高压电荷泵的设计方法，以在不降低高压输出驱动能力的情况下最大程度地减少硅面积，噪声和电路功耗。提出了用于低电源电压操作的新型电路技术。振荡器和稳压器电路均可达到1.5 V的工作电压，而稳压器则包括一个简单且坚固的纹波抑制电路。通过本文，提供了所建议电路的理论分析以及Spice仿真。利用先进的63 nm技术实现了移动NAND闪存设备，以验证所提出电路的操作。大量测量结果与分析和模拟预测的结果一致。

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