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首页> 外文期刊>IEEE Journal of Solid-State Circuits >A 200-$mu$V/e$^{-}$ CMOS Image Sensor With 100-ke$^{-}$ Full Well Capacity
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A 200-$mu$V/e$^{-}$ CMOS Image Sensor With 100-ke$^{-}$ Full Well Capacity

机译：具有200ke $ ^ {-} $全阱容量的200-μmu$ V / e $ ^ {-} $ CMOS图像传感器

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摘要

A high-sensitivity CMOS image sensor keeping a high full-well capacity has been developed by introducing a new pixel having a small floating diffusion (FD) capacitance connected to a lateral overflow integration capacitor (LOFIC) through a MOS switch. The conceptual advantage of the small FD approach over conventional column amplifier approaches is compared and demonstrated. To ensure both the high sensitivity and the high full-well capacity, the low-light and the bright-light signals (S1 and S2) are output and reproduced without a visible SNR degradation at the S1/S2 switching point. As the most critical problem, the increase of the conversion gain variation in this approach is suppressed by applying a self-aligned offset structure to the small FD. A 1/4-in VGA format CMOS image sensor fabricated through 0.18-mum 2P3M process achieves 2.2-e- rms noise floor with 200-muV/e- conversion gain and 100-ke- full-well capacity.
机译：通过引入具有小的浮动扩散（FD）电容的新像素，通过MOS开关将其连接到横向溢出积分电容器（LOFIC），已经开发了保持高全阱容量的高灵敏度CMOS图像传感器。比较并展示了小型FD方法相对于常规列放大器方法的概念优势。为了确保高灵敏度和高全阱容量，在不影响S1 / S2切换点的SNR的情况下，输出和再现弱光和强光信号（S1和S2）。作为最关键的问题，这种方法中的转换增益变化的增加是通过将自对准偏移结构应用于小FD来抑制的。通过0.18微米2P3M工艺制造的1/4英寸VGA格式CMOS图像传感器可实现2.2 rms的本底噪声，并具有200μV/ e的转换增益和100ke的全阱容量。

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