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首页> 外文期刊>IEEE Journal of Solid-State Circuits >A Fully Integrated 20-Gb/s Optoelectronic Transceiver Implemented in a Standard 0.13- $mu{hbox {m}}$ CMOS SOI Technology
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A Fully Integrated 20-Gb/s Optoelectronic Transceiver Implemented in a Standard 0.13- $mu{hbox {m}}$ CMOS SOI Technology

机译：采用标准0.13- $ mu {hbox {m}} $ CMOS SOI技术实现的全集成20 Gb / s光电收发器

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摘要

A dual-channel 10 Gb/s per channel single-chip optoelectronic transceiver has been demonstrated in a 0.13-mum CMOS SOI technology. The transceiver integrates conventionally discrete optoelectronic functions such as high-speed 10-Gb/s electro-optic modulation and 10-Gb/s optical reception on an SOI substrate using a standard CMOS process. The high optical index contrast between silicon (n=3.5) and its oxide (n=1.5) allows for very large scale integration of optical devices, while the use of a standard CMOS process allows these devices to be seamlessly fabricated together with electronics on the same substrate. Such a high level of optoelectronic integration is unprecedented, and serves to substantially reduce system footprint and power dissipation, allowing efficient scaling to higher data rates and broader functionality. This paper describes the photonic components, electronic blocks, and architecture of a CMOS photonic transceiver that achieves an aggregate data rate of 20Gb/s in a dual-channel package, with a BER of less than 10-15 and a power consumption of 1.25 W per channel with both channels operating simultaneously
机译：每通道10 Gb / s双通道单芯片光电收发器已在0.13um CMOS SOI技术中得到了证明。该收发器使用标准的CMOS工艺在SOI衬底上集成了传统的分立光电功能，例如高速10 Gb / s电光调制和10 Gb / s光接收。硅（n = 3.5）和其氧化物（n = 1.5）之间的高光学指数对比可实现光学设备的超大规模集成，而使用标准CMOS工艺可将这些设备与电子设备无缝集成在一起。相同的基材。如此高的光电集成度是空前的，可显着减少系统占用空间和功耗，从而可以有效地扩展至更高的数据速率和更广泛的功能。本文介绍了CMOS光子收发器的光子组件，电子模块和架构，该器件在双通道封装中的总数据速率达到20Gb / s，BER小于10-15，功耗为1.25 W每个通道，两个通道同时运行

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