A Compact Model of MOSFET Mismatch for Circuit Design

Carlos Galup-Montoro; Marcio C. Schneider; Hamilton Klimach; Alfredo Arnaud

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A Compact Model of MOSFET Mismatch for Circuit Design

机译：用于电路设计的MOSFET不匹配的紧凑模型

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This paper presents a compact model for MOS transistor mismatch. The mismatch model uses the carrier number fluctuation theory to account for the effects of local doping fluctuations along with an accurate and compact dc MOSFET model. The resulting matching model is valid for any operation condition, from weak to strong inversion, from the linear to the saturation region, and allows the assessment of mismatch from process and geometric parameters. Experimental results from a set of transistors integrated on a 0.35 μm technology confirm the accuracy of our mismatch model under various bias conditions.

机译：本文提出了MOS晶体管失配的紧凑模型。失配模型使用载流子数波动理论来解释局部掺杂波动的影响，以及精确而紧凑的直流MOSFET模型。所得的匹配模型对于从弱到强反演，从线性到饱和区域的任何操作条件均有效，并允许根据过程和几何参数评估失配。来自在0.35μm技术上集成的一组晶体管的实验结果证实了在各种偏置条件下我们失配模型的准确性。

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来源
《IEEE Journal of Solid-State Circuits》 |2005年第8期|p.1649-1657|共9页
作者
Carlos Galup-Montoro; Marcio C. Schneider; Hamilton Klimach; Alfredo Arnaud;
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作者单位

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类一般性问题;基本电子电路;
关键词
MOSFET; Analog design; Matching; Mismatch; Compact models;

机译：MOSFET;模拟设计;匹配;失配;紧凑型;

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5. Process-based compact modeling and analysis of silicon-on-insulator CMOS devices and circuits, including double-gate MOSFETs. [D] . Chiang, Meng-Hsueh. 2001

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7. Design methodology for ultra low-power analog circuits using next generation BSIM6 MOSFET compact model [O] . A. Mangla, M.-A. Chalkiadaki, F. Fadhuile, 2013

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8. Compact Modeling of the Dynamic Behaviour of MOSFETS [R] . Smedes, T. 1991

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A Compact Model of MOSFET Mismatch for Circuit Design

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