...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>IEEE Journal of Solid-State Circuits >Analyses and Design of Bias Circuits Tolerating Output Voltages Above BV{sub}(CEO)
【24h】

Analyses and Design of Bias Circuits Tolerating Output Voltages Above BV{sub}(CEO)

机译：容许输出电压高于BV的偏置电路的分析和设计{sub}（CEO）

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Due to the inevitable tradeoff between speed and breakdown voltage, the spectacular speed improvement of modern SiGe processes in recent history has partially been achieved at the cost of a reduction in breakdown voltages. Because supply voltages have hardly been reduced however, circuits operating at a supply voltage above the collector-emitter breakdown voltage (BV{sub}(CEO)) are common practice today and collector-base avalanche currents are therefore of major concern. Transistors that need to handle a collector-emitter voltage above (BV{sub}(CEO)) are typically found as output transistors in output driver stages and in bias current circuits. Such circuits can be designed to tolerate collector-emitter voltages above (BV{sub}(CEO)) by driving the base terminal with a relatively low impedance. This paper analyzes various conventional as well as two new bias current circuits supporting operation at collector voltages above (BV{sub}(CEO)). In the new circuits, feedforward and feedback avalanche current compensation techniques are introduced that obtain a substantial increase in output breakdown voltage of the bias circuits and improve the accuracy of the current mirror at output voltages above (BV{sub}(CEO))- With the feedback technique, a measured increase in output breakdown voltage by more than 2 V is demonstrated while the accuracy of the current mirror ratio at output voltages of 2 to 3 times (BV{sub}(CEO))is improved by an order of magnitude.
机译：由于不可避免地要在速度和击穿电压之间进行权衡，因此以降低击穿电压为代价，部分实现了近代史上现代SiGe工艺惊人的速度改进。但是，由于电源电压几乎没有降低，因此以高于集电极-发射极击穿电压（BV {sub}（CEO））的电源电压工作的电路是当今的普遍做法，因此，集电极基雪崩电流是主要关注的问题。通常需要在输出驱动器级和偏置电流电路中将需要处理高于（BV {sub}（CEO））的集电极-发射极电压的晶体管作为输出晶体管。通过以相对较低的阻抗驱动基极端子，可以将这样的电路设计为能够承受高于（BV {sub}（CEO））的集电极-发射极电压。本文分析了各种常规的以及两个新的偏置电流电路，这些电路支持在（BV {sub}（CEO））以上的集电极电压下工作。在新电路中，引入了前馈和反馈雪崩电流补偿技术，该技术可大大提高偏置电路的输出击穿电压，并在输出电压高于（BV {sub}（CEO））时提高电流镜的精度。反馈技术表明，输出击穿电压的测量值增加了2 V以上，而输出电压为2到3倍（BV {sub}（CEO））时电流镜比的精度提高了一个数量级。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号