Single-pole double-throw CMOS switches for 900-MHz and 2.4-GHz applications on p-silicon substrates

Feng-Jung Huang; O K.K.

首页> 外文期刊>IEEE Journal of Solid-State Circuits >Single-pole double-throw CMOS switches for 900-MHz and 2.4-GHz applications on p-silicon substrates

【24h】

Single-pole double-throw CMOS switches for 900-MHz and 2.4-GHz applications on p-silicon substrates

机译：单极双掷CMOS开关，用于p-硅衬底上的900MHz和2.4GHz应用

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

A 900-MHz single-pole double-throw (SPDT) switch with an insertion loss of 0.5 dB and a 2.4-GHz SPDT switch with an insertion loss of 0.8 dB were implemented using 3.3-V 0.35-Μm NMOS transistors in a 0.18-Μm bulk CMOS process utilizing 20-Ω·cm p- substrates. Impedance transformation was used to reduce the source and load impedances seen by the switch to increase the power handling capability. SPDT switches with 30-Ω impedance transformation networks exhibit 0.97-dB insertion loss and 24.3-dBm output P1dB when tuned for 900-MHz operation, and 1.10-dB insertion loss and 20.6-dBm output P1dB when tuned for 2.4-GHz operation. The 2.4-GHz switch is the first bulk CMOS switch which can be used for 802.11b wireless local area network applications.

机译：使用3.3V0.35μmNMOS晶体管在0.18-V晶体管中实现了插入损耗为0.5 dB的900MHz单刀双掷（SPDT）开关和插入损耗为0.8dB的2.4GHz SPDT开关。使用20-Ω·cm p-基板的MM体CMOS工艺。阻抗变换用于减少开关看到的源阻抗和负载阻抗，以提高功率处理能力。具有30Ω阻抗变换网络的SPDT开关在900MHz的工作频率下进行调谐时，其插入损耗为0.97dB，输出P1dB为24.3dBm；在2.4GHz的工作频率下，其插入损耗为1.10dB，输出P1dB为20.6dBm。 2.4 GHz交换机是首款可用于802.11b无线局域网应用的批量CMOS交换机。

著录项

来源
《IEEE Journal of Solid-State Circuits》 |2004年第1期|p.35-41|共7页
作者
Feng-Jung Huang; O K.K.;
展开▼
作者单位

展开▼
收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类一般性问题;基本电子电路;
关键词
CMOS analogue integrated circuits; UHF integrated circuits; field effect transistor switches; impedance matching; microwave switches; silicon; switching circuits; 0.18 micron; 0.5 dB; 0.8 dB; 0.97 dB; 1.10 dB; 2.4 GHz; 3.3 V; 802.11b wireless local area network; 900 MH;

机译：CMOS模拟集成电路;UHF集成电路;场效应晶体管开关;阻抗匹配;微波开关;硅;开关电路;0.18微米;0.5 dB;0.8 dB;0.97 dB;1.10 dB;2.4 GHz;3.3 V;802.11b无线本地区域网络;900 MH;

相似文献

外文文献
中文文献
专利

1. Single-Pole Double-Throw CMOS Switches for 900-MHz and 2.4-GHz Applications on p{sup}- Silicon Substrates [J] . Feng-Jung Huang, Kenneth K. O. IEEE Journal of Solid-State Circuits . 2004,第1期

机译：p {sup}-硅基板上用于900MHz和2.4GHz应用的单刀双掷CMOS开关
2. Single-Pole Double-Throw Switches for 2.4 GHz Transceiver in Wireless Communication Applications [J] . Adnan Kaya, Ozlem Coskun Arabian Journal for Science and Engineering. Section A, Sciences . 2013,第12期

机译：无线通信应用中用于2.4 GHz收发器的单刀双掷开关
3. Integrated CMOS transmit-receive switch using LC-tuned substrate bias for 2.4-GHz and 5.2-GHz applications [J] . Talwalkar N.A., Yue C.P., Haitao Gan, IEEE Journal of Solid-State Circuits . 2004,第6期

机译：集成的CMOS发送/接收开关，使用LC调谐的衬底偏置，适用于2.4 GHz和5.2 GHz应用
4. A 2.4-GHz Single-Pole Double-Throw T/R Switch with 0.8-dB Insertion Loss Implemented in a CMOS Process [C] . Feng-Jung Huang, Kenneth O 27th European Solid-State Circuits Conference, Sep 18-20, 2001, Villach, Austria . 2001

机译：在CMOS工艺中实现具有0.8dB插入损耗的2.4GHz单刀双掷T / R开关
5. A low-power 2.4-GHz CMOS transceiver for wireless LAN applications. [D] . Zolfaghari, Alireza. 2002

机译：用于无线局域网应用的低功耗2.4 GHz CMOS收发器。
6. CMOS-NEMS Copper Switches Monolithically Integrated Using a 65 nm CMOS Technology [O] . Jose Luis Muñoz-Gamarra, Arantxa Uranga, Nuria Barniol 2016

机译：使用65 nm CMOS技术单片集成的CMOS-NEMS铜开关
7. 25–34 GHz Single-Pole, Double-Throw CMOS Switches for a Ka-Band Phased-Array Transceiver [O] . Sangyong Park, Jeong-Yun Lee, Jong-Yeon Lee, 2018

机译：25-34 GHz单极，双掷CMOS开关，用于KA频段相控阵收发器

Single-pole double-throw CMOS switches for 900-MHz and 2.4-GHz applications on p-silicon substrates

摘要

著录项

相似文献

相关主题

期刊订阅