40-Gb/s circuits built from a 120-GHz fT SiGe technology

Freeman G.; Meghelli M.; Kwark Y.; Zier S.; Rylyakov A.; Sorna M.A.; Tanji T.; Schreiber O.M.; Walter K.; Jae-Sung Rieh; Jagannathan B.; Joseph A.; Subbanna S.

首页> 外文期刊>IEEE Journal of Solid-State Circuits >40-Gb/s circuits built from a 120-GHz fT SiGe technology

【24h】

40-Gb/s circuits built from a 120-GHz fT SiGe technology

机译：采用120 GHz fT SiGe技术构建的40 Gb / s电路

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

Product designs for 40-Gb/s applications fabricated from SiGe BiCMOS technologies are now becoming available. In this paper we first briefly discuss heterojunction bipolar transistor (HBT) device operation at high speed, demonstrating that perceived concerns regarding lower BVCEO and higher current densities required to operate silicon HBTs at such high speeds do not in actuality limit design or performance. The high-speed portions of the 40-Gb/s system are then addressed individually. We demonstrate the digital capability through a 4: 1 multiplexer and a 1 : 4 demultiplexer running over 50 Gb/s error free at a -3.3-V power supply. We also demonstrate a range of analog elements, including a lumped limiting amplifier which operates with a 35-GHz bandwidth, a transimpedance amplifier with 220-Ω gain and 49.1-GHz bandwidth, a 21.5-GHz voltage-controlled oscillator with over -100-dBc/Hz phase noise at 1-MHz offset, and a modulator driver which runs a voltage swing twice the BVCEO of the high-speed SiGe HBT. These parts demonstrate substantial results toward product offerings, on each of the critical high-speed elements of the 40-Gb/s system.

机译：现在可以使用SiGe BiCMOS技术制造的用于40 Gb / s应用的产品设计。在本文中，我们首先简要讨论了异质结双极晶体管（HBT）器件在高速下的运行情况，证明了人们对以如此高的速度运行硅HBT所需的更低的BVCEO和更高的电流密度的担忧实际上并不限制设计或性能。然后分别解决40 Gb / s系统的高速部分。我们通过一个4：1多路复用器和一个1：4多路分离器在-3.3-V电源下以超过50 Gb / s的速度无故障运行来证明其数字能力。我们还演示了一系列模拟元件，包括以35 GHz带宽工作的集总限幅放大器，具有220Ω增益和49.1 GHz带宽的互阻放大器，具有超过-100-V的21.5 GHz压控振荡器。偏移为1MHz时的dBc / Hz相位噪声，以及一个调制器驱动器，其电压摆幅是高速SiGe HBT的BVCEO的两倍。这些零件在40 Gb / s系统的每个关键高速元件上都展示了产品提供的实质性成果。

著录项

来源
《IEEE Journal of Solid-State Circuits》 |2002年第9期|p.1106-1114|共9页
作者
Freeman G.; Meghelli M.; Kwark Y.; Zier S.; Rylyakov A.; Sorna M.A.; Tanji T.; Schreiber O.M.; Walter K.; Jae-Sung Rieh; Jagannathan B.; Joseph A.; Subbanna S.;
展开▼
作者单位

展开▼
收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类一般性问题;基本电子电路;
关键词
BiCMOS analogue integrated circuits; BiCMOS digital integrated circuits; Ge-Si alloys; demultiplexing equipment; driver circuits; heterojunction bipolar transistors; high-speed integrated circuits; multiplexing equipment; semiconductor materials; voltage-controll;

机译：BiCMOS模拟集成电路;BiCMOS数字集成电路;Ge-Si合金;解复用设备;驱动器电路;异质结双极晶体管;高速集成电路;复用设备;半导体材料;电压控制;

相似文献

外文文献
中文文献
专利

1. 40-Gb/s circuits built from a 120-GHz f/sub T/ SiGe technology [J] . Freeman G., Meghelli M., Kwark Y., IEEE Journal of Solid-State Circuits . 2002,第9期

机译：采用120 GHz f / sub T / SiGe技术构建的40 Gb / s电路
2. A 40-Gb/s integrated clock and data recovery circuit in a 50-GHz fT silicon bipolar technology [J] . Wurzer M., Bock J., Knapp H., IEEE Journal of Solid-State Circuits . 1999,第9期

机译：采用50 GHz fT硅双极技术的40 Gb / s集成时钟和数据恢复电路
3. A 1-Tap 40-Gb/s Look-Ahead Decision Feedback Equalizer in 0.18-$muhbox m$SiGe BiCMOS Technology [J] . Garg A., Carusone A.C., Voinigescu S.P. IEEE Journal of Solid-State Circuits . 2006,第期

机译：采用0.18- $ muhbox m $ SiGe BiCMOS技术的1-Tap 40-Gb / s前瞻决策反馈均衡器
4. 40 Gbit/sec circuits built from a 120 GHz f/sub T/ SiGe technology [C] . Freeman, G., Kwark, Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2001. 23rd Annual Technical Digest . 2001

机译：采用120 GHz f / sub T / SiGe技术构建的40 Gbit / sec电路
5. High Speed Reconfigurable Circuits and Data Converters for Communication Systems in SiGe HBT Technology. [D] . LeRoy, Mitchell R. 2016

机译：SiGe HBT技术中用于通信系统的高速可重配置电路和数据转换器。
6. Mitigation of Single-Event Effects in SiGe-HBT Current-Mode Logic Circuits [O] . Md Arifur R. Sarker, Seungwoo Jung, Adrian Ildefonso, 2020

机译：缓解SiGe-HBT电流模式逻辑电路中的单事件效应
7. 60 GHz transceiver circuits in SiGe-HBT and CMOS technologies [O] . Hamidian Amin 2014

机译：SiGe-HBT和CMOS技术的60 GHz收发器电路

40-Gb/s circuits built from a 120-GHz fT SiGe technology

摘要

著录项

相似文献

相关主题

期刊订阅