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首页> 外文期刊>IEEE Journal of Solid-State Circuits >A 1.9-GHz CMOS VCO with micromachined electromechanically tunable capacitors
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A 1.9-GHz CMOS VCO with micromachined electromechanically tunable capacitors

机译：具有微机械机电可调电容器的1.9 GHz CMOS VCO

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摘要

This paper presents a 1.9-GHz CMOS voltage-controlled oscillator (VCO) where the resonant circuit consists of micromachined electromechnically tunable capacitors and a bonding wire inductor. The tunable capacitors were implemented in a MUMP's polysilicon surface micromachining process. These devices have a nominal capacitance of 2.1 pF and a quality factor (Q-factor) of 9.3 at 1.9 GHz. The capacitance is variable from 2.1 pF to 2.9 pF within a 4-V control, voltage range. The active circuits were fabricated in a 0.5-/spl mu/m CMOS process. The VCO was assembled in a ceramic package where the MUMP's and CMOS dice were bonded together. The experimental VCO achieves a phase noise of -98 dBc/Hz and -126 dBc/Hz at 100 kHz and 600 kHz offsets from the carrier, respectively. The tuning range of the VCO is 9%. The VCO circuit and the output buffer consume 15 mW and 30 mW from a 2.7-V power supply, respectively.
机译：本文提出了一种1.9 GHz CMOS压控振荡器（VCO），其中的谐振电路由微机械机电可调电容器和焊线电感器组成。可调谐电容器是在MUMP的多晶硅表面微加工工艺中实现的。这些器件在1.9 GHz时的标称电容为2.1 pF，品质因数（Q因子）为9.3。在4V控制电压范围内，电容可在2.1 pF至2.9 pF之间变化。有源电路采用0.5- / splμm/ m CMOS工艺制造。 VCO组装在陶瓷封装中，其中MUMP和CMOS芯片粘合在一起。实验性VCO在距载波100 kHz和600 kHz偏移处分别获得-98 dBc / Hz和-126 dBc / Hz的相位噪声。 VCO的调整范围为9％。 VCO电路和输出缓冲器从2.7V电源分别消耗15mW和30mW。

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