...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>IEEE Journal of Solid-State Circuits >A 1/2-in, 1.3 M-pixel progressive-scan CCD image sensor employing 0.25-/spl mu/m gap single-layer poly-Si electrodes
【24h】

A 1/2-in, 1.3 M-pixel progressive-scan CCD image sensor employing 0.25-/spl mu/m gap single-layer poly-Si electrodes

机译：采用0.25- / splμ/μm间隙单层多晶硅电极的1/2英寸，1.3 M像素逐行扫描CCD图像传感器

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

A 1/2-in, 1.3 M-pixel progressive-scan interline-transfer charge coupled-device (IT-CCD) image sensor has been developed for low-power and high-sensitivity digital cameras. The image sensor uses 0.25-/spl mu/m gap single-layer poly-Si for CCD transfer electrodes in order to reduce the power consumption and number of fabrication process steps. The image sensor achieved a low driving voltage (2.1 V) on a horizontal CCD (H-CCD) at a frequency of 24.5 MHz. An original pixel layout and a self-aligned photodiode structure make it possible to achieve a progressive scan pixel with well-controlled photodiode readout characteristics. An output three-stage source follower amplifier with new multioxide transistors, whose gate insulator thickness is thinner than that of a CCD register, is able to attain 17% higher gain than that of the conventional amplifier. The sensor provides low-power (100 mW) and high output sensitivity. The total number of steps for fabricating the sensor was reduced to 70% of that for conventional three-layer poly-Si electrodes.
机译：已经为低功率和高灵敏度数码相机开发了1/2英寸，1.3 M像素的逐行扫描行间传输电荷耦合器件（IT-CCD）图像传感器。图像传感器将0.25- / splμm/ m的间隙单层多晶硅用于CCD传输电极，以减少功耗和制造工艺步骤。图像传感器在水平CCD（H-CCD）上以24.5 MHz的频率实现了较低的驱动电压（2.1 V）。原始像素布局和自对准光电二极管结构可以实现具有良好控制的光电二极管读出特性的逐行扫描像素。具有新型多氧化物晶体管的输出三级源极跟随器放大器的栅极绝缘体厚度比CCD寄存器的厚度薄，其增益比传统放大器高17％。该传感器提供低功率（100 mW）和高输出灵敏度。制造传感器的步骤总数减少到常规三层多晶硅电极的70％。

著录项

相似文献

  • 外文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号