A GaAs MESFET Schottky diode barrier height reference circuit

Taylor S.S.

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A GaAs MESFET Schottky diode barrier height reference circuit

机译：GaAs MESFET肖特基二极管势垒高度参考电路

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A barrier height reference voltage has been implemented with Schottky diodes in GaAs MESFET technology. It achieves less than 100 ppm//spl deg/C drift and can be used to create a reference voltage for source coupled logic, data converters, and as the basis for a variety of biasing circuits. Moderate accuracy is achieved with a circuit topology that reduces the ratio of control amplifier input voltage to reference voltage. The 7/spl times/16 mil/sup 2/ circuit achieves 36 dB of supply rejection, draws 700 /spl mu/A from 5 V, and is implemented in a 20-GHz ion implanted manufacturing process.

机译：GaAs MESFET技术中的肖特基二极管已经实现了势垒高度参考电压。它的漂移低于100 ppm // spl deg / C，可用于为源耦合逻辑，数据转换器和各种偏置电路的基础创建参考电压。通过降低控制放大器输入电压与参考电压之比的电路拓扑可实现中等精度。 7 / spl次/ 16 mil / sup 2 /电路可实现36 dB的电源抑制，从5 V汲取700 / spl mu / A，并在20 GHz离子注入制造工艺中实现。

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《IEEE Journal of Solid-State Circuits》 |1997年第12期|P.2023-2029|共7页
作者
Taylor S.S.;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类一般性问题;基本电子电路;
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专利

1. The effect of Schottky metal thickness on barrier height inhomogeneity in identically prepared Au-GaAs Schottky diodes [J] . M Biber, OE Guellue, S Forment, Semiconductor science and technology . 2006,第1期

机译：在同样制备的Au / n-GaAs肖特基二极管中，肖特基金属厚度对势垒高度不均匀性的影响
2. Influence of hydrogen treatment and annealing processes upon the Schottky barrier height of Au-GaAs and Ti-GaAs diodes [J] . S Forment, M Biber, R L Van Meirhaeghe, Semiconductor science and technology . 2004,第12期

机译：氢处理和退火工艺对Au / n-GaAs和Ti / n-GaAs二极管肖特基势垒高度的影响
3. Barrier height engineering on GaAs THz Schottky diodes by means of high-low doping, InGaAs- and InGaP-layers [J] . Sassen S., Witzigmann B. IEEE Transactions on Electron Devices . 2000,第1期

机译：通过高低掺杂InGaAs和InGaP层对GaAs THz肖特基二极管进行势垒高度工程设计
4. A GaAs MESFET Schottky diode barrier height reference circuit [C] . Taylor, S.S. . 1997

机译：GaAs MESFET肖特基二极管势垒高度参考电路
5. Lateral variation in the Schottky barrier height and ballistic electron transport characteristics of gold/(100)gallium arsenide and gold/platinum silicide/(100)silicon diodes. [D] . Talin, Albert Alec. 1995

机译：金/（100）砷化镓和金/硅化铂/（100）硅二极管的肖特基势垒高度和弹道电子传输特性的横向变化。
6. Monolayer graphene/SiC Schottky barrier diodes with improved barrier height uniformity as a sensing platform for the detection of heavy metals [O] . Ivan Shtepliuk, Jens Eriksson, Volodymyr Khranovskyy, 2016

机译：具有改善的势垒高度均匀性的单层石墨烯/ SiC肖特基势垒二极管作为检测重金属的传感平台
7. Doping dependence of the barrier height and ideality factor of Au/n-GaAs Schottky diodes at low temperatures [O] . M. K. Hudaita, S. B. Krupanidhia 2016

机译：低温下au / n-Gaas肖特基二极管势垒高度和理想因子的掺杂依赖性
8. Interface-State Measurements of GaAs Schottky Barriers Using AdmittanceTechniques: Relationship to Barrier Height Instability [R] . Christianson, K. A. 1990

机译：利用导纳技术测量Gaas肖特基势垒的界面态：与势垒高度不稳定性的关系

A GaAs MESFET Schottky diode barrier height reference circuit

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