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首页> 外文期刊>IEEE Journal of Solid-State Circuits >A 98 mm/sup 2/ die size 3.3-V 64-Mb flash memory with FN-NOR type four-level cell
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A 98 mm/sup 2/ die size 3.3-V 64-Mb flash memory with FN-NOR type four-level cell

机译:具有FN-NOR型四级单元的98 mm / sup 2 /芯片尺寸3.3-V 64-Mb闪存

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摘要

In order to realize high-capacity and low-cost flash memory, we have developed a 64-Mb flash memory with multilevel cell operation scheme. The 64-Mb flash memory has been achieved in a 98 mm/sup 2/ die size by using four-level per cell operation scheme, NOR type cell array, and 0.4-/spl mu/m CMOS technology. Using an FN type program/erase cell allows a single 3.3 V supply voltage. In order to establish fast programming operation using Fowler-Nordheim (FN)-NOR type memory cell, we have developed a highly parallel multilevel programming technology. The drain voltage controlled multilevel programming (DCMP) scheme, the parallel multilevel verify (PMV) circuit, and the compact multilevel sense-amplifier (CMS) have been implemented to achieve 128 b parallel programming and 6.3 /spl mu/s/Byte programming speed.
机译:为了实现高容量和低成本的闪存,我们开发了一种具有多级单元操作方案的64 Mb闪存。通过使用四级每单元操作方案,NOR型单元阵列和0.4- / splμ/ m CMOS技术,已经以98 mm / sup 2 /芯片尺寸实现了64 Mb闪存。使用FN型编程/擦除单元可以提供3.3 V的单电源电压。为了建立使用Fowler-Nordheim(FN)-NOR型存储单元的快速编程操作,我们开发了一种高度并行的多层编程技术。已经实现了漏极电压控制的多级编程(DCMP)方案,并行多级验证(PMV)电路和紧凑型多级感测放大器(CMS),以实现128b并行编程和6.3 / spl mu / s / Byte的编程速度。

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