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Design concept for radiation hardening of low power and low voltage dynamic memories

机译:低功耗和低压动态存储器的辐射硬化设计概念

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摘要

A radiation hard low power, low voltage dynamic memory is obtained by the use of a dummy cell concept. Compared to conventional dummy cell concepts, this concept applies a fully sized dummy cell. By optimizing the dummy cell precharge voltage for 5 V and 3 V operation and the timing of the dummy word-line, the overall soft error rate (SER) of the chip is improved by 2 orders of magnitude. An additional improvement of 1 order of magnitude is possible for 3 V operation by adjusting substrate bias and cell plate voltage. The results are verified by an accelerated SER measurement with a radium 226 source and an additional field soft error study.
机译:通过使用虚拟单元概念可以获得辐射硬的低功耗,低压动态存储器。与传统的虚拟单元格概念相比,此概念适用于全尺寸的虚拟单元格。通过针对5 V和3 V操作以及虚拟字线的时序优化虚拟单元预充电电压,芯片的整体软错误率(SER)提高了2个数量级。通过调整基板偏置和电池板电压,可以在3 V的工作条件下再提高1个数量级。通过使用226镭源进行的加速SER测量以及另外的现场软误差研究验证了结果。

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