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首页> 外文期刊>Solid State Communications >Investigation of charge carrier mobility in 5,6,11,12-tetraphenylnapthacene (rubrene) and coumarin 6 doped Alq_3 films
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Investigation of charge carrier mobility in 5,6,11,12-tetraphenylnapthacene (rubrene) and coumarin 6 doped Alq_3 films

机译：5、6、11、12-四苯基萘并（香豆素）掺杂香豆素6的Alq_3薄膜中载流子迁移率的研究

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摘要

The doping effect on charge carrier mobility in tris (8-hydroxyquinolinato) aluminum (Alq_3) was studied by time-of-flight (TOF) measurements. The polar dopant, coumarin 6 (C-6) and extensive π conjugated dopant, 5,6,11,12-tetraphenylnaphthacene (rubrene) were used for this study. The co-doped of rubrene (Rb) with C-6 into Alq_3 improved the carrier mobility compared to the single doped Alq_3:C-6 film. The carrier mobility in single doped Alq_3:C-6 film did not follow the linear relationship of Poole-Frenkel (PF) model with applied electric field. The mobility was in agreement with the PF model at two different ranges of electric fields (F) separated by a critical field (F_c)~(1/2) ≈ 373 (V/cm)~(1/2). The mobility in co-doped Alq_3:(Rb:C-6) film followed the linear relationship with the PF model. The energetic disorder was found as ～0.32 eV in co-doped films. It was ～0.55 and ～0.27 eV before and after the critical field in Alq_3:C-6 film. The values of positional disorders in co-doped films were estimated as ～1.8 and it was ～2 in Alq_3:C-6 film at F~(1/2) ≤ 373 (V/cm)~(1/2). The organic light emitting diode performance of the co-doped film was improved compared to single doped film. The luminescence efficiency was improved tremendously to ～6 Cd/A in co-doped device at 45 mA/cm~2 current compared to Alq_3:C-6 film device of ～1 Cd/A.
机译：通过飞行时间（TOF）测量研究了三（8-羟基喹啉）铝（Alq_3）中掺杂对载流子迁移率的影响。极性掺杂剂香豆素6（C-6）和广泛的π共轭掺杂剂5,6,11,12-四苯基萘并（rubrene）用于这项研究。与单一掺杂的Alq_3：C-6薄膜相比，将红荧烯（Rb）与C-6共掺杂到Alq_3中改善了载流子迁移率。单掺杂Alq_3：C-6薄膜中的载流子迁移率不遵循Poole-Frenkel（PF）模型与施加电场的线性关系。在由临界场（F_c）〜（1/2）≈373（V / cm）〜（1/2）隔开的两个不同电场（F）范围内，迁移率与PF模型一致。共掺杂Alq_3：（Rb：C-6）薄膜的迁移率与PF模型呈线性关系。在共掺杂薄膜中发现能量紊乱为〜0.32 eV。 Alq_3：C-6薄膜的临界场前后分别为〜0.55和〜0.27 eV。在F〜（1/2）≤373（V / cm）〜（1/2）下，Alq_3：C-6薄膜中共掺杂薄膜的位置失调值约为〜1.8，约为2。与单掺杂膜相比，共掺杂膜的有机发光二极管性能得到改善。与〜1 Cd / A的Alq_3：C-6薄膜器件相比，在45 mA / cm〜2的电流下，共掺杂器件的发光效率大大提高至〜6 Cd / A。

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