Electroluminescence from a ZnO homojunction device grown by pulsed laser deposition

W.F. Liu; J.M. Bian; L.Z. Hu; H.W. Liang; H.Q. Zang; J.C. Sun; Z.W. Zhao; A.M. Liu; G.T. Du

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Electroluminescence from a ZnO homojunction device grown by pulsed laser deposition

机译：脉冲激光沉积生长的ZnO同质结器件的电致发光

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A ZnO homojunction light emitting device was grown on n+ GaAs substrate by pulsed laser deposition. As-doped ZnO film by diffusion of As from the substrate was used for the p-type side and Al-doped ZnO film for the n-type side of the device. A distinct electroluminescence emission consisting of a dominant emission peak at ～2.5 eV and a weak shoulder centered at ～3.0 eV was observed at room temperature. The Ⅰ-Ⅴ characteristic of the ZnO homojunction showed a good rectifying behavior with a turn-on voltage of ～ 4.5 V and a reverse breakdown voltage of ～9 V.

机译：通过脉冲激光沉积在n + GaAs衬底上生长ZnO同质结发光器件。通过从衬底扩散As而得到的掺杂As的ZnO膜用于器件的p型侧，而掺杂Al的ZnO膜用于器件的n型侧。在室温下，观察到一个明显的电致发光发射，该发光包括一个在〜2.5 eV处的主发射峰和一个在〜3.0 eV处的弱肩峰。 ZnO同质结的Ⅰ-Ⅴ特性表现出良好的整流性能，其开启电压为〜4.5 V，反向击穿电压为〜9V。

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来源
《Solid State Communications》 |2007年第11期|p.655-658|共4页
作者
W.F. Liu; J.M. Bian; L.Z. Hu; H.W. Liang; H.Q. Zang; J.C. Sun; Z.W. Zhao; A.M. Liu; G.T. Du;
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State Key Laboratory for Materials modification by laser, ion, electron beams, Department of Physics, Dalian University of Technology, Dalian Liaoning 116024, China;

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正文语种 eng
中图分类固体物理学;
关键词
A. ZnO homojunction; B. Light emitting device; D. As doping; D. Pulsed laser deposition;

机译：ZnO同质结;B.发光器件;D．作为掺杂;D.脉冲激光沉积;

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Electroluminescence from a ZnO homojunction device grown by pulsed laser deposition

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