Weak antilocalization and beating pattern in an InGaAs/InAlAs quantum well

W.Z. Zhou; T. Lin; L.Y. Shang; G. Yu; Z.M. Huang; S.L. Guo; Y.S. Gui; N. Dai; J.H. Chu; L.J. Cui; D.L. Li; H.L. Gao; Y.P. Zeng

首页> 外文期刊>Solid State Communications >Weak antilocalization and beating pattern in an InGaAs/InAlAs quantum well

【24h】

Weak antilocalization and beating pattern in an InGaAs/InAlAs quantum well

机译：InGaAs / InAlAs量子阱中的弱反定位和跳动模式

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

We have observed the weak antilocalization (WAL) and beating SdH oscillation through magnetotransport measurements performed on a heavily δ-doped In_(0.52)Al_(0.48)As/In_(0.53)Ga_(0.47)As/In_(0.52)Al_(0.48)As single quantum well in an applied magnetic field up to 13 T and a temperature at 1.5 K. Both effects are caused by the strong Rashba spin-orbit (SO) coupling due to high structure inversion asymmetry (SIA). The Rashba SO coupling constant α and zerofield spin splitting Δ_0 are estimated and the obtained values are consistent from different analysis for this sample.

机译：我们已经观察到通过对重δ掺杂的In_（0.52）Al_（0.48）As / In_（0.53）Ga_（0.47）As / In_（0.52）Al_（0.48）进行的磁传输测量而观察到的弱反定位（WAL）和拍打SdH振荡）作为单量子阱，在高达13 T的外加磁场和1.5 K的温度下。这两种效应都是由于高结构反对称性（SIA）导致的强Rashba自旋轨道（SO）耦合引起的。估算了Rashba SO耦合常数α和零场自旋分裂Δ_0，并且从该样品的不同分析中获得的值是一致的。

著录项

来源
《Solid State Communications》 |2007年第7期|300-303|共4页
作者
W.Z. Zhou; T. Lin; L.Y. Shang; G. Yu; Z.M. Huang; S.L. Guo; Y.S. Gui; N. Dai; J.H. Chu; L.J. Cui; D.L. Li; H.L. Gao; Y.P. Zeng;
展开▼
作者单位

National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类固体物理学;
关键词
A. Quantum well; D. Two-dimensional electron gas; D. Magnetoresistance;

机译：A.量子阱;D.二维电子气;D.磁阻;

相似文献

外文文献
中文文献
专利

1. Experimental approaches to zero-field spin splitting in a gated high-mobility In0.53Ga0.47As/InP quantum well structure: Weak antilocalization and beating pattern [J] . Journal of Applied Physics . 2010,第5期

机译：门控高迁移率In0.53Ga0.47As / InP量子阱结构中零场自旋分裂的实验方法：弱反定位和跳动模式
2. Experimental approaches to zero-field spin splitting in a gated high-mobility In_(0.53)Ga_(0.47)As/InP quantum well structure: Weak antilocalization and beating pattern [J] . Y. M. Zhou, G. Yu, L. M. Wei, Journal of Applied Physics . 2010,第5期

机译：门控高迁移率In_（0.53）Ga_（0.47）As / InP量子阱结构中零场自旋分裂的实验方法：弱反定位和跳动模式
3. Weak antilocalization and beating pattern in high electron mobility Al_xGa_(1-x)N/GaN two-dimensional electron gas with strong Rashba spin-orbit coupling [J] . W. Z. Zhou, T. Lin, L. Y. Shang, Journal of Applied Physics . 2008,第5期

机译：具有强Rashba自旋轨道耦合的高电子迁移率Al_xGa_（1-x）N / GaN二维电子气中的弱反定位和跳动模式
4. Anti-Weak-Localization Study of Rashba Spin-Splitting Energy as a Function of Well Asymmetry in InAlAs/InGaAs/InAlAs Quantum Wells [C] . Takaaki Koga, Junsaku Nitta, Tatsushi Akazaki, Spintronics . 2002

机译：InAlAs / InGaAs / InAlAs量子阱中Rashba自旋分裂能量与阱不对称性的反弱定位研究
5. InGaAs/InAlAs quantum wells for 1.3 micron electro-absorption modulators on GaAs substrates. [D] . Shen, Lei. 1997

机译：GaAs衬底上用于1.3微米电吸收调制器的InGaAs / InAlAs量子阱。
6. Optimization of MBE Growth Conditions of In0.52Al0.48As Waveguide Layers for InGaAs/InAlAs/InP Quantum Cascade Lasers [O] . Piotr Gutowski, Iwona Sankowska, Tomasz Słupiński, 2019

机译：InGaAs / InAlAs / InP量子级联激光器的In0.52Al0.48As波导层MBE生长条件的优化
7. Rashba Spin-Orbit Coupling Probed by the Weak Antilocalization Analysis in InAlAs/InGaAs/InAlAs Quantum Wells as a Function of Quantum Well Asymmetry [O] . Koga Takaaki, Nitta Junsaku, Akazaki Tatsushi, 2002

机译：通过InAlAs / InGaAs / InAlAs量子阱中的弱反定位分析探测的Rashba自旋轨道耦合与量子阱不对称性的关系
8. Strained InGaAs/InAlAs Quantum Wells for Complementary III-V Transistors. [R] . Bennett, B. R., Chick, T. F., Boos, J. B., 2014

机译：用于互补III-V晶体管的应变InGaas / Inalas量子阱。

Weak antilocalization and beating pattern in an InGaAs/InAlAs quantum well

摘要

著录项

相似文献

相关主题

期刊订阅