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首页> 外文期刊>Solid State Communications >Structural and UV photoluminescence properties of single crystalline SnO_2 films grown on α-Al_2O_3 (0001) by MOCVD
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Structural and UV photoluminescence properties of single crystalline SnO_2 films grown on α-Al_2O_3 (0001) by MOCVD

机译：MOCVD法在α-Al_2O_3（0001）上生长的单晶SnO_2薄膜的结构和紫外光致发光特性

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摘要

High-quality single crystalline SnO_2 films have been deposited on α-Al_2O_3 (0001) substrates by metalorganic chemical vapor deposition (MOCVD). The structural and photoluminescence (PL) properties of the SnO_2 films were investigated. The prepared samples were epitaxial single crystalline films with the rutile structure of pure SnO_2. A single and sharp ultraviolet (UV) PL peak near 331 nm was observed at room temperature (RT). At a temperature of 13 K, two other narrow PL peaks located at 369 and 375 nm as well as a broad feeble peak near 500 nm were observed. The corresponding PL mechanisms were investigated.
机译：高质量的单晶SnO_2薄膜已经通过金属有机化学气相沉积（MOCVD）沉积在α-Al_2O_3（0001）衬底上。研究了SnO_2薄膜的结构和光致发光（PL）性能。制备的样品是具有纯金红石结构的纯金红石结构的外延单晶膜。在室温（RT）下观察到一个接近331 nm的单一且尖锐的紫外线（UV）PL峰。在13 K的温度下，观察到另外两个位于369和375 nm的窄PL峰以及一个接近500 nm的宽弱峰。研究了相应的PL机制。

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