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首页> 外文期刊>Solid State Communications >Memory effect in the triglycine sulphate crystal polarized not parallel to the ferroelectric axis
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Memory effect in the triglycine sulphate crystal polarized not parallel to the ferroelectric axis

机译：三甘氨酸硫酸盐晶体极化不平行于铁电轴的记忆效应

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摘要

The experimental results concerning the electric susceptibility χ_(22) of the triglycine sulphate (TGS) crystal polarized not parallel to the ferroelectric axis at different temperatures have been shown. The process of partial rejuvenation in the ferroelectric phase has been presented. It has been found that the temperature changes of the slope s = dχ_(22)~(-1) /dT correspond to step-wise changes of a pyroelectric coefficient p = dP/dT (P = P_2, P_3), where P_2 and P_3 are the longitudinal and transverse polarizations, respectively. An interpretation of temperature dependences of P_2 and P_3 as well as χ_(22) of the triglycine sulphate ferroelectric previously exposed to a prolonged transverse electric field has been proposed. It has been concluded that the number of elementary cells containing molecules in metastable states depends on temperature in such a way that some kind of memory effect can be observed.
机译：已显示出在不同温度下极化不平行于铁电轴极化的三甘氨酸硫酸盐（TGS）晶体的电化率χ_（22）的实验结果。提出了铁电相中的部分再生过程。已经发现，斜率s ＝ d×_（22）〜（-1）/ dT的温度变化对应于热电系数p ＝ dP / dT（P ＝ P_2，P_3）的阶跃变化，其中P_2和dT。 P_3分别是纵向和横向极化。已经提出了对P_2和P_3以及先前暴露于延长的横向电场的硫酸三甘氨酸铁电体的χ_（22）的温度依赖性的解释。已经得出结论，包含处于亚稳定状态的分子的基本细胞的数量取决于温度，从而可以观察到某种记忆效应。

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