Bulk Sn_(1-x)Mn_xO_2 magnetic semiconductors without room-temperature ferromagnetism

K.H. Gao; Z.Q. Li; X.J. Liu; W. Song; H. Liu; E.Y. Jiang

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Bulk Sn_(1-x)Mn_xO_2 magnetic semiconductors without room-temperature ferromagnetism

机译：无室温铁磁性的块状Sn_（1-x）Mn_xO_2磁性半导体

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摘要

Polycrystalline Sn_(1-x)Mn_xO_2 (0 ≤ x ≤ 0.05) diluted magnetic semiconductors were prepared by solid-state reaction method and their structural and magnetic properties had been investigated systematically. The three Mn-doped samples (x = 0.01, 0.03, 0.05) undergo paramagnetic to ferromagnetic phase transitions upon cooling, but their Curie temperatures are far lower than room temperature. The magnetization cannot be attributed to any identified impurity phase. It is also found that the magnetization increases with increasing Mn doping, while the ratio of the Mn ions contributing to ferromagnetic ordering to the total Mn ions decreases.

机译：采用固态反应法制备了多晶Sn_（1-x）Mn_xO_2（0≤x≤0.05）稀磁半导体，并对其结构和磁性进行了系统研究。三个Mn掺杂样品（x = 0.01、0.03、0.05）在冷却时经历顺磁性到铁磁性的相变，但是它们的居里温度远低于室温。磁化不能归因于任何已识别的杂质相。还发现，随着Mn掺杂的增加，磁化强度增加，而有助于铁磁有序化的Mn离子与总Mn离子的比例降低。

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来源
《Solid State Communications》 |2006年第4期|p.175-178|共4页
作者
K.H. Gao; Z.Q. Li; X.J. Liu; W. Song; H. Liu; E.Y. Jiang;
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作者单位

Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Faculty of Science, Institute of Advanced Materials Physics, Tianjin University, Tianjin 300072, China;

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原文格式 PDF
正文语种 eng
中图分类固体物理学;
关键词
A. Diluted magnetic semiconductor; D. Room temperature ferromagnetism; D. Solid state reaction;

机译：稀释的磁性半导体;D.室温铁磁性;D．固态反应;

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Bulk Sn_(1-x)Mn_xO_2 magnetic semiconductors without room-temperature ferromagnetism

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