Transferability of optical bowing parameters between binary and ternary group-IV alloys

DCosta VR; Cook CS; Menendez J; Tolle J; Kouvetakis J; Zollner S

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Transferability of optical bowing parameters between binary and ternary group-IV alloys

机译：二元和三元IV合金之间光学弯曲参数的可传递性

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We present a detailed analysis of the compositional dependence of the average (E) over bar (1) of the E-1 and E-1 + Delta(1) transition energies in Ge1-x-ySixSny alloys. We show that this dependence can be explained in terms of three bowing parameters-b(SiGe), b(GeSn) and b(SiSn)-which scale with the product Delta chi Delta R of the Phillips electronegativity and size mismatches between Si, Ge, and Sn. (c) 2006 Elsevier Ltd. All rights reserved.

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来源
《Solid State Communications》 |2006年第6期|p. 309-313|共5页
作者
DCosta VR; Cook CS; Menendez J; Tolle J; Kouvetakis J; Zollner S;
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作者单位

Arizona State Univ, Dept Phys & Astron, Tempe, AZ 85287 USA;

Arizona State Univ, Dept Chem & Biochem, Tempe, AZ 85287 USA;

APRDL, Freescale Semicond, Austin, TX 78721 USA;

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原文格式 PDF
正文语种 eng
中图分类固体物理学;
关键词
semiconductors; optical properties; SPECIAL QUASIRANDOM STRUCTURES; BAND-GAP; ELECTRONIC-PROPERTIES; QUATERNARY ALLOYS; TEMPERATURE-DEPENDENCE; THEORETICAL-ANALYSIS; DIELECTRIC FUNCTION; EPITAXIAL-GROWTH; GE; SEMICONDUCTORS;

机译：半导体;光学性能;特殊准随机结构;带隙;电子性质;四元合金;温度依赖性;理论分析;介电函数;表观生长;GE;半导电性;

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Transferability of optical bowing parameters between binary and ternary group-IV alloys

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