• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Solid State Communications >Synthesis and photoluminescence of aligned straight silica nanowires on Si substrate
【24h】

Synthesis and photoluminescence of aligned straight silica nanowires on Si substrate

机译：Si衬底上取向的直二氧化硅纳米线的合成与光致发光

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Aligned straight silica nanowires (NWs) have been synthesized on Si wafer by thermal evaporation of mixed powders of zinc carbonate hydroxide and graphite at 1100 degrees C and condensation on Si substrate without using any catalyst. The straight silica NWs have diameters ranging from 50 to 100 nm, and lengths of several micrometers, with cone-shaped tips at their ends. High deposition temperature and relatively high SiOx vapor concentration near the growth substrate would be beneficial to the formation of the aligned straight silica NWs. Different morphologies of silica nanostructures have also been obtained by varying the deposition temperature and the vapor concentration of the SiOx molecules. Room temperature photoluminescence measurements on the oriented silica NWs show that two green emission bands at 510 and 560 nm, respectively, revealing that the aligned straight silica NWs might have potential applications in the future optoelectronic devices. (c) 2006 Elsevier Ltd. All rights reserved.
机译：通过在1100℃下热蒸发氢氧化锌和石墨的混合粉末并在不使用任何催化剂的情况下在Si衬底上冷凝，在Si晶片上合成了取向的直的二氧化硅纳米线（NWs）。直的二氧化硅NW的直径为50至100nm，长度为几微米，其末端具有锥形尖端。生长衬底附近的高沉积温度和相对较高的SiOx蒸汽浓度将有利于形成取向的直链二氧化硅NW。通过改变沉积温度和SiOx分子的蒸气浓度，也获得了二氧化硅纳米结构的不同形态。取向二氧化硅NW的室温光致发光测量表明，分别在510和560 nm处有两个绿色发射带，这表明取向的直二氧化硅NW可能在未来的光电器件中具有潜在的应用。 （c）2006 Elsevier Ltd.保留所有权利。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号