Phenomenological band structure model of magnetic coupling in semiconductors

Dalpian GA; Wei SH; Gong XG; da Silva AJR; Fazzio A

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Phenomenological band structure model of magnetic coupling in semiconductors

机译：半导体中磁耦合现象学的能带结构模型

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摘要

A unified band structure model is proposed to explain the magnetic ordering in Mn-doped semiconductors. This model is based on the p-d and d-d level repulsions between the Mn ions and host elements and can successfully explain magnetic ordering observed in all Mn doped II-VI and III-V semiconductors such as CdTe, GaAs, ZnO, and GaN. The model can also be used to explain the interesting behavior of GaMnN, which changes from ferromagnetic ordering to antiferromagnetic ordering as the Mn concentration increases. This model, therefore, is useful to provide a simple guideline for future band structure engineering of magnetic semiconductors. (c) 2006 Elsevier Ltd. All rights reserved.

机译：提出了一个统一的能带结构模型来解释锰掺杂半导体中的磁序。该模型基于Mn离子与主体元素之间的p-d和d-d级排斥力，可以成功地解释在所有Mn掺杂的II-VI和III-V半导体（如CdTe，GaAs，ZnO和GaN）中观察到的磁有序。该模型还可以用来解释GaMnN的有趣行为，随着Mn浓度的增加，GaMnN从铁磁有序变为反铁磁有序。因此，该模型有助于为磁性半导体的未来能带结构工程提供简单的指导。（c）2006 Elsevier Ltd.保留所有权利。

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来源
《Solid State Communications》 |2006年第7期|p. 353-358|共6页
作者
Dalpian GA; Wei SH; Gong XG; da Silva AJR; Fazzio A;
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作者单位

Natl Renewable Energy Lab, Basic Sci Ctr, Golden, CO 80401 USA;

Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China;

Chinese Acad Sci, Inst Solid State Phys, Hefei 230031, Peoples R China;

Univ Sao Paulo, Inst Fis, BR-05315970 Sao Paulo, SP, Brazil;

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正文语种 eng
中图分类固体物理学;
关键词
semiconductor; band structure; magnetic properties; MOLECULAR-BEAM-EPITAXY; 1ST PRINCIPLES; FERROMAGNETISM; SPINTRONICS; ALLOYS; ENERGY; PHASE; GAN;

机译：半导体;能带结构;磁性能;分子束表位;第一原理;铁磁学;自旋学;合金;合金;能级;相;

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1. Comparison between ab-initio and phenomenological modeling of the exchange couplings in diluted magnetic semiconductors: the case of Zn_(1-x)Cr_xTe [J] . Georges Bouzerar, Richard Bouzerar, Josef Kudrnovsky, Physica Status Solidi. A, Applications and Materials Science . 2006,第11期

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3. Coupling of the magnetic Sayers and electron spin polarization in four-layer structures of amplitude and nonmagnetic semiconductors [J] . V. V. Zorchenko, A. Yu. Sipatov, V. V. Volobuev Low temperature physics: Simultaneous Russian - English publication . 2003,第11期

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4. A phenomenological model for the non-linear magnetomechanical coupling in ferromagnetic materials [C] . Dai-ning Fang, Xue Feng, Keh-chih Hwang International Conference on Nonlinear Mechanics . 2002

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5. Coupling reduction using electromagnetic band gap structures in enclosures and cavities. [D] . Mohajer Iravani, Baharak. 2005

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6. Valence Band Structure of InAs1−xBix and InSb1−xBix Alloy Semiconductors Calculated Using Valence Band Anticrossing Model [O] . D. P. Samajdar, S. Dhar -1

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7. Comparison between ab-initio and phenomenological modeling of the exchange couplings in diluted magnetic semiconductors: the case of $Zn_{1-x}Cr_{x}Te$ [O] . ~Bouzerar, Georges, Bouzerar, Richard, ~Kudrnovský, Josef, 2006

机译：ab-initio与现象学模型的比较稀磁半导体中的交换耦合：例如 $ {Zn_ 1-X} CR_ {X} $碲
8. Observations on ion track structure in semiconductors : a phenomenological study [R] . Selva, L. E., Wallace, R. E. 2001

机译：对半导体中离子轨道结构的观察：现象学研究

Phenomenological band structure model of magnetic coupling in semiconductors

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