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Field dependence of hole mobility in TPD-doped polystyrene

机译：TPD掺杂聚苯乙烯中空穴迁移率的场依赖性

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摘要

Field and temperature dependence of hole mobility in N,N-diphenyl-N,N-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4-diamine (TPD) doped in polystyrene (PS) is studied using the transient photoconductivity technique. We observe both the positive and negative field dependence of mobility with increasing field and temperature. The field and temperature at which negative field dependence begins is low compared with earlier reports on similar systems (with 20 wt% dopant concentration). Results are discussed on the basis of the Gaussian disorder model (GDM), which predicts that the interplay of both the energetic and positional disorder of dopant molecules in the sample decides the slope of the log it versus E-1/2 plot. The observed mobility dependence is rationalized on the basis of low energetic disorder in the sample. The reason for low energetic disorder is purely due to the film morphology of the sample. Even for a dopant concentration of 20 wt%, we observe clustering and chaining of TPD molecules, which may provide low energetic and positional disorder. (c) 2006 Published by Elsevier Ltd.
机译：研究了掺杂聚苯乙烯（PS）的N，N-二苯基-N，N-双（3-甲基苯基）-（1,1'-联苯）-4,4-二胺（TPD）中空穴迁移率的温度和温度依赖性使用瞬态光电导技术。我们观察到迁移率随场和温度的增加而对正场和负场的依赖性。与较早的类似系统报告（掺杂浓度为20 wt％）相比，负电场依赖性开始的场和温度低。在高斯紊乱模型（GDM）的基础上讨论了结果，该模型预测样品中掺杂剂分子的高能和位置紊乱之间的相互作用决定了log相对于E-1 / 2图的斜率。观察到的迁移率依赖性基于样本中的低能障碍而合理化。低能紊乱的原因完全是由于样品的薄膜形态所致。即使对于20 wt％的掺杂剂浓度，我们也观察到TPD分子的聚集和链接，这可能会提供较低的能量和位置紊乱。 （c）2006年由Elsevier Ltd.发布。

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