Temperature dependence of absorption edge anisotropy in 2H-MoSe2 layered semiconductors

著录项

• 来源
  《Solid State Communications》 |2006年第4期|p. 176-180|共5页
• 作者

  Hu SY; Lee YC; Shen JL; Chen KW; Tiong KK; Huang YS;

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• 作者单位

  Tung Nan Inst Technol, Res Ctr Micro Nano Technol, Dept Comp Sci & Informat Engn, Taipei 222, Taiwan;

  Tung Nan Inst Technol, Res Ctr Micro Nano Technol, Dept Elect Engn, Taipei 222, Taiwan;

  Chung Yuan Christian Univ, Dept Phys, Chungli 32023, Taiwan;

  Natl Taiwan Ocean Univ, Dept Elect Engn, Chilung 202, Taiwan;

  Natl Taiwan Univ Sci & Technol, Dept Elect Engn, Taipei, Taiwan;

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• 收录信息
• 原文格式 PDF
• 正文语种 eng
• 中图分类 固体物理学;
• 关键词

  semiconductors; photoconductivity; TRANSITION-METAL DICHALCOGENIDES; OPTICAL-ABSORPTION; SINGLE-CRYSTALS; URBACH RULE; THIN-FILMS; MOSE2; DISORDER; SPECTRA; TAILS; RAMAN;

  机译：半导体;光电导性;过渡金属二硫属化合物;光学吸收;单晶;城市规则;薄膜;MOSE2;乱序;光谱;尾巴;拉曼;