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Pressure dependence of T-c and H-c2 of a dirty two-gap superconductor, carbon-doped MgB2

机译：肮脏的两能隙碳掺杂MgB2的T-c和H-c2的压力依赖性

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We have measured T-C and H-C2(T) of carbon-doped MgB2 under hydrostatic pressures up to 15.6 kbar. dT(C)/dP is determined to be -0.20 K/kbar and H-C2(T = 0) decreases with pressure at a rate that is consistent with the theoretical value for pure MgB2, dH(C2)/dP = -0.036 T/kbar. By analyzing our results within the theoretical framework of a dirty two-gap supersonductor, we determine values for the interband coupling and the ratio between the diffusivities associated with the two bands at three different pressures. We also extract the diffusivities and coherence lengths associated with each band. Finally, we estimate the pressure dependence of the charge carrier concentration in the a band to be d In n/dP = -0.013/kbar. (c) 2006 Elsevier Ltd. All rights reserved.
机译：我们已经在高达15.6 kbar的静水压力下测量了碳掺杂MgB2的T-C和H-C2（T）。确定dT（C）/ dP为-0.20 K / kbar，并且H-C2（T = 0）随压力以与纯MgB2的理论值一致的速率降低，dH（C2）/ dP = -0.036吨/千吨通过在肮脏的两间隙超音速器的理论框架内分析我们的结果，我们确定了带间耦合的值以及在三个不同压力下与两个带相关的扩散率之间的比率。我们还提取与每个频带相关的扩散性和相干长度。最后，我们估计一个带中的载流子浓度与压力的关系为d In n / dP = -0.013 / kbar。 （c）2006 Elsevier Ltd.保留所有权利。

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