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Improved fatigue endurance in Mn-doped Bi3.25La0.75Ti3O12 thin films

机译：Mn掺杂Bi3.25La0.75Ti3O12薄膜的疲劳强度得到改善

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Mn-doped Bi3.25La0.75Ti3O12 (BLT) thin films are fabricated by depositing sol-gel solutions on Pt/Ti/SiO2/Si(100) substrate. Mn-doping in BLT films influences the ferroelectric properties, structural orientation, as well as the surface morphology of the films, even if the Mn concentration is low. Mn-doping at 1% of Ti-sites in BLT films enhances the remanent polarization and reduces the coercive field by approximately 25%. However, polarization decreases gradually by Mn-doping more than 1%, which may be due to the trapping of charged particles (holes or electrons) at defects located at the interface or grain boundaries generated by excess Mn-doping. The reduced polarization due to the Mn-doping recovers during switching cycles higher than 10(7)-10(4) for the x value of 0.05-0.2 in Bi3.25La0.75Ti3-xMnxO12. Under the high switching field, the probability of field-assisted unpinning of domains is expected to be high and this may be the main cause for increase in polarization. Mn-doping significantly improves the fatigue endurance in BLT films because of de-trapping of charges from defects under high switching field. (c) 2006 Published by Elsevier Ltd.
机译：通过在Pt / Ti / SiO2 / Si（100）衬底上沉积溶胶-凝胶溶液来制备Mn掺杂的Bi3.25La0.75Ti3O12（BLT）薄膜。即使Mn浓度低，BLT膜中的Mn掺杂也会影响铁电性能，结构取向以及膜的表面形态。 BLT薄膜中Ti位点的1％掺杂Mn可增强剩余极化，并使矫顽场降低约25％。然而，通过超过1％的Mn掺杂，极化逐渐降低，这可能是由于带电粒子（空穴或电子）在界面处的缺陷处捕获或由过量Mn掺杂产生的晶界引起的。在Bi3.25La0.75Ti3-xMnxO12中，当x值为0.05-0.2时，由于Mn掺杂而导致的极化降低在开关周期高于10（7）-10（4）时恢复。在高切换场下，域的场辅助解除固定的可能性预计很高，这可能是极化增加的主要原因。 Mn掺杂可显着提高BLT膜的疲劳强度，因为在高开关场下电荷会从缺陷中捕获。 （c）2006年由Elsevier Ltd.发布。

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