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Compositional tuning of ferromagnetism in Ga1-xMnxP

机译:Ga1-xMnxP中铁磁性的组成调整

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We report the magnetic and transport properties of Ga1-xMnxP synthesized via ion implantation followed by pulsed laser melting over a range of x, namely 0.018-0.042. Like Ga1-xMnxAs, Ga1-xMnxP displays a monotonic increase of the ferromagnetic Curie temperature with x associated with the hole-mediated ferromagnetic phase while thermal annealing above 300 degrees C leads to a quenching of ferromagnetism that is accompanied by a reduction of the substitutional fraction of Mn. However, contrary to observations in Ga1-xMnxAs, Ga1-xMnxP is non-metallic over the entire composition range. At the lower temperatures over which the films are ferromagnetic, hole transport occurs via hopping conduction in a Mn-derived band; at higher temperatures it arises from holes in the valence band which are thermally excited across an energy gap that shrinks with X. (c) 2006 Elsevier Ltd. All rights reserved.
机译:我们报告了通过离子注入,然后在x范围即0.018-0.042范围内进行脉冲激光熔化合成的Ga1-xMnxP的磁性和传输性质。像Ga1-xMnxAs一样,Ga1-xMnxP显示出铁磁性居里温度的单调增加,其中x与空穴介导的铁磁性相相关,而300摄氏度以上的热退火导致铁磁性的淬灭,伴随着取代分数的降低锰但是,与在Ga1-xMnxAs中观察到的相反,Ga1-xMnxP在整个组成范围内都是非金属的。在较低的温度下(铁磁薄膜为铁磁性),通过源自Mn的能带中的跳跃传导发生空穴传输。在较高的温度下,它是由价带中的空穴引起的,这些空穴在能隙中随X收缩而被热激发。(c)2006 Elsevier Ltd.保留所有权利。

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