Low-temperature magnetoresistance due to weak localization in lightly doped semiconductors

Veinger AI; Zabrodskii AG; Tisnek TV; Goloshchapov SI

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Low-temperature magnetoresistance due to weak localization in lightly doped semiconductors

机译：轻掺杂半导体中的弱局部化导致的低温磁阻

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摘要

The first observation of low-temperature magnetoresistance (MR) of interference nature in the case of a light doping is reported. The MR occurs in n- and p-type Ge samples at a frequency of 10 GHz at temperatures below 30 K in weak magnetic fields on the background of the classical MR effect associated with electrons in different valleys (n-Ge) and with heavy and light holes (p-Ge). (C) 2004 Elsevier Ltd. All rights reserved.

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《Solid State Communications》 |2005年第7期|p. 455-458|共4页
作者
Veinger AI; Zabrodskii AG; Tisnek TV; Goloshchapov SI;
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作者单位

Russian Acad Sci, Ioffe Physicotech Inst, St Petersburg 194021, Russia;

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原文格式 PDF
正文语种 eng
中图分类固体物理学;
关键词
semiconductors; electronic transport;

机译：半导体;电子运输;

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1. Low-temperature microwave magnetoresistance of lightly doped p-Ge and p-Ge1-xSix [J] . Veinger AI, Zabrodskii AG, Tisnek TV Semiconductors . 2005,第10期

机译：轻掺杂p-Ge和p-Ge1-xSix的低温微波磁阻
2. Finite size suppression of the weak field magnetoresistance of lightly phosphorous-doped silicon [J] . Nicholas A. Porter, Christopher H. Marrows Journal of Applied Physics . 2012,第4期

机译：轻度掺杂磷的硅的弱磁场磁阻的有限尺寸抑制
3. Kinetic Theory of Negative Magnetoresistance as an Alternative to Weak Localization in Semiconductors [J] . V. E. Kaminskii Semiconductors . 2002,第11期

机译：负磁阻动力学理论可替代半导体中的弱局部化
4. Negative magnetoresistance due to weak localization and electron-electron interactions effects in metallic n-type InP semiconductor at very low temperatures with magnetic field [C] . A. El kaaouachi, R. Abdia, A. Nafidi, Physical chemistry of interfaces and nanomaterials VII . 2008

机译：金属n型InP半导体在极低温度和磁场作用下由于弱的局部化和电子-电子相互作用而产生的负磁阻
5. Weak localization magnetoresistance in quench condensed lithium films. [D] . Black, Eric Drury. 1997

机译：淬火凝结锂薄膜中的弱局部磁阻。
6. A Novel 4H-SiC MESFET with a Heavily Doped Region a Lightly Doped Region and an Insulated Region [O] . Hujun Jia, Mengyu Dong, Xiaowei Wang, 2021

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7. Finite size suppression of the weak field magnetoresistance of lightly phosphorous-doped silicon [O] . Porter NA, Marrows CH 2012

机译：有限尺寸抑制轻微磷掺杂硅的弱磁场磁阻
8. Magnetoresistance in Metals, Semiconductors, and Alloys: A Bibliography on Theoretical and Experimental Aspects [R] . Leonard, L. E. 1964

机译：金属，半导体和合金中的磁电阻：理论和实验方面的参考书目

Low-temperature magnetoresistance due to weak localization in lightly doped semiconductors

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