Influence of mobile space charges on electrical properties of ferroelectric Bi3.5La0.5Ti3O12 thin films

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Influence of mobile space charges on electrical properties of ferroelectric Bi3.5La0.5Ti3O12 thin films

机译：流动空间电荷对铁电Bi3.5La0.5Ti3O12薄膜电性能的影响

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摘要

Lanthanum-substituted bismuth titanate, Bi3.5La0.5Ti3O12 (i.e., x=0.5 in Bi4-xLaxTi3O12), thin films have been grown on Pt/Ti/SiO2/Si substrates using pulsed laser deposition. The frequency dependence of the real part epsilon'(omega) and the imaginary part epsilon''(omega) of the dielectric constant has been studied. The epsilon-'(omega) does not show any sudden change within the frequency range of 10(2)-10(6) Hz. In contrast, the shows a large dispersion as frequency decreases. The observed relaxation behavior in epsilon'(omega) can be explained in terms of a migration of oxygen vacancies in (Bi2O2)(2+) layers, not in Bi2Ti3O10 perovskite layers. (c) 2004 Elsevier Ltd. All rights reserved.

机译：镧取代的钛酸铋铋Bi3.5La0.5Ti3O12（即Bi4-xLaxTi3O12中的x = 0.5）已使用脉冲激光沉积法在Pt / Ti / SiO2 / Si衬底上生长了薄膜。研究了介电常数的实部ε和虚部ε的频率依赖性。 ε-ω在10（2）-10（6）Hz的频率范围内没有显示任何突然的变化。相反，当频率降低时，它们显示出较大的色散。可以在（Bi2O2）（2+）层中而不是在Bi2Ti3O10钙钛矿层中以氧空位的迁移来解释在ε中观察到的弛豫行为。（c）2004 Elsevier Ltd.保留所有权利。

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来源
《Solid State Communications》 |2005年第10期|p. 671-674|共4页
作者
Bu SD;
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作者单位

Chonbuk Natl Univ, Dept Phys, Jeonju 561756, South Korea;

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正文语种 eng
中图分类固体物理学;
关键词
ferroelectrics; thin films; dielectric response; NONVOLATILE MEMORIES; SRBI2TA2O9; BI4TI3O12; FATIGUE; POLARIZATION; CAPACITORS; DEPOSITION; CERAMICS; TITANATE;

机译：铁电体;薄膜;介电响应;非易失性记忆;SRBI2TA2O9;BI4TI3O12;疲劳;极化;电容器;沉积;陶瓷;钛酸盐;

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Influence of mobile space charges on electrical properties of ferroelectric Bi3.5La0.5Ti3O12 thin films

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