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Electronic band gaps of semiconductors as influenced by their isotopic composition

机译：半导体的电子带隙受同位素组成的影响

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The present paper focuses on the renormalization effects of the band gaps in the electronic band structure of the elemental semiconductors traced to zero-point vibrations. Electron-phonon interaction and volume changes (in combination with anharmonicity) are the underlying microscopic mechanisms, both dependent on M-1/2, M being the average isotopic mass. Thus isotopically controlled crystals offer an extraordinary opportunity to test the theoretical predictions with a variety of spectroscopic techniques. The paper discusses the theoretical predictions and their experimental verifications, exploiting derivative and photoluminescence spectroscopy. Illustrative examples on Si and Ge, drawn from the investigations of the authors, are presented. (c) 2005 Elsevier Ltd. All rights reserved.
机译：本文着重于归因于零点振动的元素半导体电子能带结构中的带隙重整化效应。电子-声子相互作用和体积变化（与非谐性结合）是潜在的微观机理，两者均取决于M-1 / 2，M是平均同位素质量。因此，同位素控制的晶体为利用各种光谱技术测试理论预测提供了绝佳的机会。本文利用微分和光致发光光谱技术讨论了理论预测及其实验验证。给出了从作者的调查中得出的有关Si和Ge的示例。 （c）2005 Elsevier Ltd.保留所有权利。

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