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Nonlinear electron transport properties of InAlAs/InGaAs based Y-branch junctions for microwave rectification at room temperature

机译：基于InAlAs / InGaAs的Y分支结在室温下用于微波整流的非线性电子传输特性

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摘要

A detailed analysis of nonlinear effects-electron switching and rectification, in InAlAs/InGaAs based Y-branch junction (YBJ) devices is presented to investigate the potential of YBJ for high frequency applications at 300 K. Results based on semi-classical simulations yield good qualitative agreement with measurements and previously reported theoretical and experimental results. The nonlinear parabolic behaviour of our device is attributed to device geometry and space charge effects. RF analysis shows that the YBJ has tremendous intrinsic potential to function as a frequency doubler and microwave rectifier when operated in the parabolic regime. The present analysis serves as a tool to optimize the bias conditions for RF measurements and to estimate the effect of interconnects and parasitic elements on the RF performance of real devices. (c) 2005 Elsevier Ltd. All rights reserved.
机译：对基于InAlAs / InGaAs的Y分支结（YBJ）器件中的非线性效应-电子开关和整流进行了详细分析，以研究YBJ在300 K高频应用中的潜力。基于半经典模拟的结果可得出良好的结果与测量结果和先前报道的理论和实验结果在质量上吻合。我们设备的非线性抛物线行为归因于设备的几何形状和空间电荷效应。射频分析表明，当在抛物线状态下工作时，YBJ具有巨大的内在潜力，可以用作倍频器和微波整流器。本分析可作为一种工具来优化RF测量的偏置条件，并估计互连和寄生元件对实际设备RF性能的影响。 （c）2005 Elsevier Ltd.保留所有权利。

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