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首页> 美国政府科技报告 >Electronic Properties of Pseudomorphic InGaAs/AlGaAs (ON GaAs) and InGaAs/InAlAs (On InP) MODFET Structures
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Electronic Properties of Pseudomorphic InGaAs/AlGaAs (ON GaAs) and InGaAs/InAlAs (On InP) MODFET Structures

机译：假晶InGaas / alGaas（ON Gaas）和InGaas / Inalas（Inp）mODFET结构的电子特性

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Pseudomorphic (strained channel) modulation doped field effect transistors (MODFETs) have recently received a considerable amount of attention. These devices provide potential for both improved device performance and new physics studies. In this paper we present theoretical studies of n-type and p-type strained channel MODFET's. Information on carrier masses, subband occupation, and other charge control picture as a function of strain in the channel is presented. The n-MODFET studies are based on using the results of tight binding calculations for bandstructure in the strained channel. The p-MODFET problem involves the use of the Kohn Luttinger Hamiltonian. Self consistent solution of the Schrodinger equation and the Poisson equation then allows us to study the MODFET properties. In p-type MODFETs, the control of heavy hole - light hole coupling via strain allows the possibility of tailoring hole masses. Comparisons with some of the experimental works previously published are also presented. Pseudomorphic strained channel modulation, Doped fields, Effect transistors, MODFETs, Reprints. (mjm)

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