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Properties of K_(0.5)Bi_(0.5)TiO_3 thin films deposited on different substrates

机译：沉积在不同衬底上的K_（0.5）Bi_（0.5）TiO_3薄膜的性能

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摘要

K_(0.5)Bi_(0.5)TiO_3 thin films were deposited on fused quartz, n-type Si(100) and Pt/TiO_2/SiO_2/Si substrates by repeated coating/dying cycles. X-ray diffraction analysis shows that the films annealed at 700℃ for 10 min present perovskite phase. Atomic force microscopy reveals that the surface morphology is smooth, the grain sizes of the films on Si(100) are quite larger than on fused quartz. The capacitance-voltage hysteresis loops at various sweeping speed are collected as are polarization types. The films in the ON and OFF states are relatively stable. The films also exhibit a hysteresis loop at an applied voltage of 4 V, with a remanent polarization of 9.3 μC/cm~2 and a coercive voltage of 2 V. The insulating property of negative bias voltage is better than that of positive bias voltage. The transmittance of the films is between 74 and 82% in the wavelength range of 200-2000 nm.
机译：通过重复的涂覆/染色循环，将K_（0.5）Bi_（0.5）TiO_3薄膜沉积在熔融石英，n型Si（100）和Pt / TiO_2 / SiO_2 / Si衬底上。 X射线衍射分析表明，在700℃退火10min的薄膜呈现钙钛矿相。原子力显微镜显示其表面形态是光滑的，Si（100）上的膜的晶粒尺寸比熔融石英上的要大得多。收集各种扫描速度下的电容-电压磁滞回线和极化类型。处于开和关状态的薄膜相对稳定。薄膜在施加的电压为4 V时也表现出磁滞回线，剩余极化强度为9.3μC/ cm〜2，矫顽电压为2V。负偏压的绝缘性优于正偏压的绝缘性。在200-2000nm的波长范围内，薄膜的透射率在74％至82％之间。

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