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Variable resistance at the boundary between semimetal and excitonic insulator

机译:半金属和激子绝缘子之间的边界处的可变电阻

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摘要

We solve the two-band model for the transport across a junction between a semimetal and an excitonic insulator. We analyze the current in terms of two competing terms associated with neutral excitons and charged carriers, respectively. We find a high value for the interface resistance, extremely sensitive to the junction transparency. We explore favorable systems for experimental confirmation. (c) 2004 Elsevier Ltd. All rights reserved.
机译:我们为跨半金属和激子绝缘子之间的交界处的传输求解了两频带模型。我们分别根据与中性激子和带电载流子相关的两个竞争术语来分析电流。我们发现界面电阻值很高,对结透明性极为敏感。我们探索有利于实验确认的系统。 (c)2004 Elsevier Ltd.保留所有权利。

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