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首页> 外文期刊>Solid State Communications >Anomalous dielectric properties in (BaSr)TiO(3)films fabricated by pulsed-laser deposition in N-2 atmosphere
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Anomalous dielectric properties in (BaSr)TiO(3)films fabricated by pulsed-laser deposition in N-2 atmosphere

机译：在N-2气氛中通过脉冲激光沉积制备的（BaSr）TiO（3）薄膜的反常介电性能

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A high dielectric constant of 2500 at 10 kHz near room temperature was observed in (Ba0.5Sr0.5)TiO3 (BST) films prepared by pulsed-laser deposition (PLD) at 550 degrees C in N-2 atmosphere. The dielectric constant is weakly temperature-dependent above 200 K. However, there is about one hundred fold drop below 200 K, which can be characterized by a thermally excited relaxation process. The temperature and frequency-dependent dielectric response of the film is very similar to that reported for the so-called 'colossal' dielectric constant material, such as CaCu3Ti4O12. The dielectric properties are sensitive to the metal contacts with different work functions, however insensitive to the film thicknesses. Such an anomalous dielectric response for the BST films is ascribed to the formation of the Schottky barrier between the metallic electrode and the film surface, and the existence of the mobile charges in the film as indicated by the frequency characteristics of dielectric constant changing as the applied dc bias. (C) 2005 Elsevier Ltd. All rights reserved.
机译：在通过N-2气氛在550摄氏度下通过脉冲激光沉积（PLD）制备的（Ba0.5Sr0.5）TiO3（BST）薄膜中，在接近室温的10 kHz下观察到了2500的高介电常数。介电常数在200 K以上时与温度的关系很小。但是，在200 K以下时，介电常数下降约100倍，这可以通过热激发弛豫过程来表征。薄膜的温度和频率相关介电响应与所谓的“巨大”介电常数材料（如CaCu3Ti4O12）报道的非常相似。介电性能对具有不同功函数的金属触点敏感，但对薄膜厚度不敏感。 BST薄膜的这种异常介电响应归因于在金属电极和薄膜表面之间形成肖特基势垒，以及薄膜中存在的可移动电荷，如电介质常数随施加的频率变化而变化直流偏置（C）2005 Elsevier Ltd.保留所有权利。

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