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首页> 外文期刊>Solid State Communications >Electronic structures of p-phenylene biphenyltetracarboximide polyimide/indium-tin oxide heterostructures grown on glass substrates for organic light-emitting devices
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Electronic structures of p-phenylene biphenyltetracarboximide polyimide/indium-tin oxide heterostructures grown on glass substrates for organic light-emitting devices

机译：在有机发光器件的玻璃基板上生长的对亚苯基联苯四甲酰亚胺聚酰亚胺/铟锡氧化物异质结构的电子结构

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摘要

p-Phenylene biphenyltetracarboximide (BPDA-PDA) polyimide (PI) layers were grown on indium-tin oxide (ITO)-coated glass substrates by curing the PI precursor layer. The ionization energy, which was determined from the gamma-focused ion beam (FIB) measurements and corresponds to the energy level of the highest occupied molecular orbital (HOMO), of the PI layer was 4.77 eV, and the optical energy gap obtained from the absorbance measurements was 3.51 eV. The energy levels of the HOMO and the lowest unoccupied molecular orbital of the PI layer were determined on the basis of the FIB and absorbance measurements. These results can help in understanding the electronic structure of the BPDA-PDA PI/ITO heterostructures for organic light-emitting devices. (c) 2005 Elsevier Ltd. All rights reserved.
机译：对苯二甲撑联苯四甲酰亚胺（BPDA-PDA）聚酰亚胺（PI）层通过固化PI前体层在涂有铟锡氧化物（ITO）的玻璃基板上生长。 PI层的电离能由伽马聚焦离子束（FIB）测量确定，与最高占据分子轨道（HOMO）的能级相对应，为4.77 eV，从该能级获得的光能隙吸光度测量值为3.51 eV。根据FIB和吸光度测量值确定HOMO的能级和PI层的最低未占据分子轨道。这些结果可以帮助理解有机发光器件的BPDA-PDA PI / ITO异质结构的电子结构。 （c）2005 Elsevier Ltd.保留所有权利。

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