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Depositing transparent conducting indium-tin oxide layers on substrate used in the production of transparent conducting electrodes in organic LED displays comprises using combined HF/DC sputtering of indium-tin oxide target
Depositing transparent conducting indium-tin oxide layers on substrate used in the production of transparent conducting electrodes in organic LED displays comprises using combined HF/DC sputtering of indium-tin oxide target
Process for depositing transparent conducting indium-tin oxide (ITO) layers having a resistance of less than 200 micro-ohm.cm and a surface roughness of less than 1 nm on a substrate comprises using a combined HF/DC sputtering of an indium-tin oxide target. An Ar/H2 mixture is added to the process gas during sputtering. Preferred Features: The HF performance during sputtering is preferably 60-80 %. The mixing ratio of the Ar/H2 mixture is 80: 20. The pressure of the process gas during sputtering is 0.5-5, especially 1.5-3 micro-bar.
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机译：在衬底上沉积电阻小于200微欧·厘米且表面粗糙度小于1 nm的透明导电铟锡氧化物（ITO）层的方法包括使用铟锡的组合HF / DC溅射氧化物靶。在溅射过程中，将Ar / H2混合物添加到工艺气体中。优选的特征：溅射期间的HF性能优选为60-80％。 Ar / H 2混合物的混合比为80∶20。溅射期间工艺气体的压力为0.5-5微巴，特别是1.5-3微巴。
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