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Preparing substrates coated with transparent conducting oxide-layer, by depositing conducting oxide-layer by cathodic sputtering of ceramic or metallic target on substrate and subsequently designating the layer by rapid thermal processing
Preparing substrates coated with transparent conducting oxide-layer, by depositing conducting oxide-layer by cathodic sputtering of ceramic or metallic target on substrate and subsequently designating the layer by rapid thermal processing
The method comprises depositing a transparent conducting oxide (TCO)-layer by a cathodic sputtering of a ceramic or a metallic target on a substrate and subsequently designating the TCO-layer by rapid thermal processing (RTP), and treating the metallic target by an impulse energy input using an electromagnetic radiation or particle bombardment and then treating an optical scattering TCO-layer. A RTP-treatment takes place with the energy input, which lies: below a swelling entry that causes an electrical degradation of a non RTP-treated TCO-layer; and above a minimum entry. The method comprises depositing a transparent conducting oxide (TCO)-layer by a cathodic sputtering of a ceramic or a metallic target on a substrate and subsequently designating the TCO-layer by rapid thermal processing (RTP), and treating the metallic target by an impulse energy input using an electromagnetic radiation or particle bombardment and then treating an optical scattering TCO-layer. A RTP-treatment takes place with the energy input, which lies: below a swelling entry that causes an electrical degradation of a non RTP-treated TCO-layer; and above a minimum entry, which lies within 75-85% of the swelling entry. The energy input is adjusted over an energy density and an exposure time of 1 mu s to 1 second. A separation layer is separated from a material having poor thermal conductivity before the TCO-layer on the substrate. The TCO-layer has an initial surface resistivity of 5-50 Ohms. The RTP-treatment takes place on a partial surface of the substrate.
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