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Temperature dependence of the gap in the density of states near the Fermi level in a hole doped manganite

机译：空穴掺杂锰矿中费米能级附近的态密度缺口的温度依赖性

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摘要

In this paper, we report a model-based quantitative analysis of temperature dependent scanning tunneling spectroscopy (STS) data taken on epitaxial thin films of the hole doped manganite La_(0.7)Ca_(0.3)MnO_3. The film, grown on lattice matched NdGaO_3 substrate, has a ferromagnetic transition temperature T_c = 268 K. The analysis allows us to evaluate how the tunneling curve evolves across the transition temperature. We find that there is a gap Δ in the density of states (DOS), which peaks at T ≈ T_c. The gap closes in the ferromagnetic state following the evolution of the magnetization. The gap closing is gradual and not sudden at T = T_c. Above T_c the gap reduces from the peak value and reaches a limiting value of ≈ 75 meV for T/T_c ≥ 1.1 which is close to the value of 60 meV seen from transport experiments.
机译：在本文中，我们报告了基于模型的温度依赖性扫描隧道光谱（STS）数据的定量分析，该数据取自掺杂有孔的锰矿La_（0.7）Ca_（0.3）MnO_3的外延薄膜。在晶格匹配的NdGaO_3衬底上生长的薄膜具有铁磁转变温度T_c = 268K。该分析使我们能够评估隧穿曲线如何在转变温度范围内演化。我们发现状态密度（DOS）中存在一个间隙Δ，该间隙在T≈T_c达到峰值。随着磁化的发展，间隙在铁磁状态下闭合。间隙闭合是逐渐的，在T = T_c时不是突然的。在T_c之上，间隙从峰值减小，并且对于T / T_c≥1.1达到约75 meV的极限值，该极限值接近于从传输实验中看到的60 meV的值。

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