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Experimental investigation of the C-MN matrix element in the band anticrossing model for GaAsN and GaInAsN layers

机译:GaAsN和GaInAsN层禁带反交模型中C-MN矩阵元素的实验研究

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The temperature dependence of bandgap energy of GaAs0.98N0.02 and Ga0.95In0.05As0.98N0.02 compounds has been analysed in order to determine the C-MN matrix element of the band anticrossing model. We have found that the element equals 2.48 and 2.60 eV for GaAs0.98N0.02 and Ga0.95In0.05As0.98N0.02 layers, respectively. When the same value has been assumed for annealed layers, an increase in the energy of the resonant nitrogen level EN has been obtained. Two possible mechanisms leading to the increase in this energy are discussed in this work. (C) 2003 Elsevier Ltd. All rights reserved. [References: 29]
机译:分析了GaAs0.98N0.02和Ga0.95In0.05As0.98N0.02化合物带隙能量的温度依赖性,以确定带反交叉模型的C-MN矩阵元素。我们发现,对于GaAs0.98N0.02和Ga0.95In0.05As0.98N0.02层,元素分别等于2.48和2.60 eV。当对于退火层假设相同的值时,已经获得了共振氮能级EN的能量的增加。在这项工作中讨论了导致这种能量增加的两种可能的机制。 (C)2003 Elsevier Ltd.保留所有权利。 [参考:29]

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