Electronic transport in amorphous carbon nitride (a-CN_x:H) and carbon oxide (a-CO_x:H) films

Sushil Kumar; C. Godet

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Electronic transport in amorphous carbon nitride (a-CN_x:H) and carbon oxide (a-CO_x:H) films

机译：非晶氮化碳（a-CN_x：H）和氧化碳（a-CO_x：H）膜中的电子传输

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The dielectric properties of a-CN_x:H and a-CO_x:H thin films have been investigated using ohmic σ(T) and field-dependent σ(F) electrical conductivity measurements. A lower density of electronic states in carbon oxides has been inferred from the Ln(σ) ≈ T~(-1/4) behavior, consistent with a hopping mechanism. The dielectric constant ε values deduced from the Poole-Frenkel field-dependence are found to decrease (increase) with increasing oxygen (nitrogen) content. Using refractive index values obtained from ellipsometry, a good agreement between ε and n~2 is found for the oxygen-rich (18-20%) alloys, having values of ε ～ 1.9-2.3, which could be considered as a new low dielectric constant material.

机译：已使用欧姆σ（T）和场相关σ（F）电导率测量研究了a-CN_x：H和a-CO_x：H薄膜的介电性能。从Ln（σ）≈T〜（-1/4）行为可以推断出碳氧化物中较低的电子态密度，这与跳变机制一致。发现由Poole-Frenkel场相关性推导的介电常数ε值随着氧（氮）含量的增加而降低（增加）。使用椭圆偏振法获得的折射率值，发现富氧（18-20％）合金的ε和n〜2之间具有良好的一致性，其值ε〜1.9-2.3，可以认为是一种新的低介电常数恒定的材料。

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来源
《Solid State Communications》 |2004年第5期|p.331-334|共4页
作者
Sushil Kumar; C. Godet;
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作者单位

Thin Film Technology Group, National Physical Laboratory, Dr K.S. Krishnan Road, New Delhi 110 012, India;

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原文格式 PDF
正文语种 eng
中图分类固体物理学;
关键词
A. thin films; D. dielectric response; D. electronic transport; D. electronic states (localized); D. tunneling;

机译：A.薄膜;D.介电响应;D.电子运输;D.电子状态（本地化）;D.挖洞;

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Electronic transport in amorphous carbon nitride (a-CN_x:H) and carbon oxide (a-CO_x:H) films

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