Exciton tunnelling in ZnCdSe quantum well/CdSe quantum dots

Hua Jin; Li-Gong Zhang; Zhu-Hong Zheng; Xiang-Gui Kong; De-Zhen Shen

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Exciton tunnelling in ZnCdSe quantum well/CdSe quantum dots

机译：ZnCdSe量子阱/ CdSe量子点中的激子隧穿

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Exciton tunnelling through a ZnSe barrier layer of various thicknesses is investigated in a Zn_(0.72)Cd_(0.28)Se/CdSe coupled quantum well/quantum dots (QW/QDs) structure using photoluminescence (PL) spectra and near resonant pump-probe technique. Fast exciton tunnelling from quantum well to quantum dots is observed by transient differential transmission. The tunnelling time is 1.8, 4.4 and 39 ps for barrier thickness of 10, 15 and 20 nm, respectively.

机译：使用光致发光（PL）光谱和近共振泵浦探针技术，在Zn_（0.72）Cd_（0.28）Se / CdSe耦合量子阱/量子点（QW / QDs）结构中研究了穿过各种厚度的ZnSe阻挡层的激子隧穿。。通过瞬态差分传输可以观察到从量子阱到量子点的快速激子隧穿。对于10、15和20 nm的势垒厚度，隧穿时间分别为1.8、4.4和39 ps。

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来源
《Solid State Communications》 |2004年第10期|p.653-655|共3页
作者
Hua Jin; Li-Gong Zhang; Zhu-Hong Zheng; Xiang-Gui Kong; De-Zhen Shen;
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作者单位

Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033, China;

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原文格式 PDF
正文语种 eng
中图分类固体物理学;
关键词
A. Quantum wells; A. Quantum dots; D. Tunnelling; E. Luminescence;

机译：A.量子阱;A。量子点;D.隧道;E.发光性;

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专利

1. The Exciton Tunneling in ZnCdSe/ZnSe Asymmetric Double Quantum Well [J] . GUANGYOU YU, XIWU FAN, JIYING ZHANG Journal of Electronic Materials . 1998,第7a12期

机译：ZnCdSe / ZnSe不对称双量子阱中的激子隧穿
2. The Exciton Tunneling in ZnCdSe/ZnSe Asymmetric Double Quantum Well [J] . GUANGYOU YU, XIWU FAN, JIYING ZHANG Journal of Electronic Materials . 1998,第9期

机译：ZnCdSe / ZnSe不对称双量子阱中的激子隧穿
3. Origin of localized states in zinc-blende ZnCdSe thin films and the influence on carrier relaxation of self-assembled ZnTe/ZnCdSe quantum dots [J] . Lee Ling, Dai Yue-Ru, Yang Chu-Shou, Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics . 2015,第Null期

机译：掺锌ZnCdSe薄膜中局部态的起源及其对自组装ZnTe / ZnCdSe量子点载流子弛豫的影响
4. Pseudo quantum dot behavior due to excitonic transitions in wide gap quantum wire lasers: InGaN-AlGaN and ZnCdSe-ZnMgSSe material systems [C] . Wenli Huang, Faquir C. Jain International Semiconductor Device Research Symposium . 2007

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5. Growth and Characterization of Type-II Submonolayer ZnCdTe/ZnCdSe Quantum Dot Superlattices for Efficient Intermediate Band Solar Cells. [D] . Dhomkar, Siddharth. 2015

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6. Photoinduced Energy Transfer in ZnCdSeS Quantum Dot–PhthalocyaninesHybrids [O] . Sadananda Mandal, *, Miguel Garcia Iglesias, 2018

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7. Coherent Exciton Lasing in ZnSe/ZnCdSe Quantum Wells? [O] . M. E. Flatté, E. Runge, H. Ehrenreich 2016

机译：Znse / ZnCdse量子阱中的相干激子？

Exciton tunnelling in ZnCdSe quantum well/CdSe quantum dots

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