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Photoluminescence characteristics of GaAsSbN/GaAs epilayers lattice-matched to GaAs substrates

机译：GaAsSbN / GaAs外延层的晶格匹配GaAs衬底的光致发光特性

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The photoluminescence (PL) characteristics of GaAsSbN/GaAs epilayers grown by molecular beam epitaxy (MBE) are carefully investigated. The results show that antimony (Sb) incorporation into GaNAs material has less influence on the N-induced localization states. For the same N concentration, GaAsSbN material can reach an emission wavelength near 1.3 mum more easily than GaInNAs material. The rapid thermal annealing (RTA) experiment shows that the annealing induced rearrangement of atoms and related blueshift in GaAsSbN epilayers are smaller than those in GaNAs and GaInNAs epilayers. The GaAsSbN material can keep a longer emission wavelength near 1.3 mum-emission even after the annealing treatment. Raman spectroscopy analysis gives further insight into the structure stability of GaAsSbN material after annealing. (C) 2004 Elsevier Ltd. All rights reserved.
机译：仔细研究了通过分子束外延（MBE）生长的GaAsSbN / GaAs外延层的光致发光（PL）特性。结果表明，锑（Sb）掺入GaNAs材料对N诱导的定位态影响较小。对于相同的氮浓度，GaAsSbN材料比GaInNAs材料更容易达到1.3 mum的发射波长。快速热退火（RTA）实验表明，GaAsSbN外延层中退火引起的原子重排和相关的蓝移小于GaNAs和GaInNAs外延层中的原子。即使在退火处理之后，GaAsSbN材料也可以在1.3微米发射附近保持更长的发射波长。拉曼光谱分析进一步揭示了退火后GaAsSbN材料的结构稳定性。 （C）2004 Elsevier Ltd.保留所有权利。

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